MT29F64G08CBCABH1-12ITZ:A TR

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics: Non-volatile, high capacity, fast access speed
• Package: Integrated Circuit (IC)
• Essence: NAND Flash Memory
• Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Part Number: MT29F64G08CBCABH1-12ITZ:A TR
• Density: 64 Gigabit (8 Gigabyte)
• Organization: 8,388,608 pages x 2,112 bytes
• Voltage Supply: 2.7V - 3.6V
• Interface: Toggle Mode 2.0
• Access Time: 25 ns (max)
• Operating Temperature: -40°C to +85°C
• Endurance: 3,000 Program/Erase cycles
• Data Retention: 10 years

Detailed Pin Configuration

The MT29F64G08CBCABH1-12ITZ:A TR has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | VCCQ | I/O power supply voltage | | 3 | GND | Ground | | 4 | RE# | Read Enable | | 5 | WE# | Write Enable | | 6 | CLE | Command Latch Enable | | 7 | ALE | Address Latch Enable | | 8-15 | A[0:7] | Address Inputs | | 16-23 | A[8:15] | Address Inputs | | 24-31 | A[16:23] | Address Inputs | | 32-39 | A[24:31] | Address Inputs | | 40-47 | DQ[0:7] | Data Inputs/Outputs |

Functional Features

• Toggle Mode 2.0 interface for high-speed data transfer
• Advanced Error Correction Code (ECC) for improved data reliability
• Block Management and Wear Leveling algorithms for enhanced endurance
• Power-On Auto Boot feature for easy system initialization
• Internal Program/Erase Controller for efficient memory operations

Advantages and Disadvantages

Advantages: - High storage capacity allows for large data storage requirements - Fast access speed enables quick data retrieval - Non-volatile nature ensures data retention even without power - Advanced ECC provides reliable data integrity - Efficient block management and wear leveling prolongs lifespan

Disadvantages: - Limited endurance compared to other memory technologies - Higher cost per unit compared to traditional hard drives - Sensitive to environmental factors such as temperature and humidity

Working Principles

The MT29F64G08CBCABH1-12ITZ:A TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The toggle mode interface facilitates fast data transfer between the memory device and the host system.

When data needs to be written, the internal program/erase controller manages the process by applying appropriate voltages to the memory cells. During read operations, the stored data is retrieved by activating the necessary address lines and reading the corresponding data lines.

Detailed Application Field Plans

The MT29F64G08CBCABH1-12ITZ:A TR is widely used in various electronic devices and systems that require non-volatile data storage. Some common application fields include: - Solid-State Drives (SSDs) - USB Flash Drives - Digital Cameras - Mobile Phones - Tablets - Industrial Control Systems

Detailed and Complete Alternative Models

• MT29F64G08CBABA
• MT29F64G08CBACB
• MT29F64G08CBADAWP
• MT29F64G08CBADAWP-ITZ:A TR
• MT29F64G08CBADAWP-ITZ:B TR

These alternative models offer similar specifications and functionality, providing options for different system requirements and design considerations.

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