MT29F64G08CECCBH1-12ITZ:C TR

Product Overview

Category

MT29F64G08CECCBH1-12ITZ:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CECCBH1-12ITZ:C TR offers a storage capacity of 64 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: This product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Low power consumption: The MT29F64G08CECCBH1-12ITZ:C TR is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: It comes in a small form factor, making it easy to integrate into various electronic devices without occupying much space.

Packaging/Quantity

The MT29F64G08CECCBH1-12ITZ:C TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Part Number: MT29F64G08CECCBH1-12ITZ:C TR
• Memory Type: NAND Flash
• Storage Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Operating Temperature Range: -40°C to 85°C
• Package Type: TSOP (Thin Small Outline Package)
• Package Dimensions: 12mm x 20mm x 1.2mm

Detailed Pin Configuration

The MT29F64G08CECCBH1-12ITZ:C TR has a total of 48 pins, which are assigned specific functions for data transfer, power supply, and control signals. The detailed pin configuration is as follows:

(Pin Number) - (Pin Name) 1 - VCC 2 - ALE 3 - CLE 4 - CE# 5 - RE# 6 - WE# 7 - WP# 8 - R/B# 9 - DQ0 10 - DQ1 11 - DQ2 12 - DQ3 13 - DQ4 14 - DQ5 15 - DQ6 16 - DQ7 17 - NC 18 - NC 19 - NC 20 - NC 21 - NC 22 - NC 23 - NC 24 - NC 25 - NC 26 - NC 27 - NC 28 - NC 29 - NC 30 - NC 31 - NC 32 - NC 33 - NC 34 - NC 35 - NC 36 - NC 37 - NC 38 - NC 39 - NC 40 - NC 41 - NC 42 - NC 43 - NC 44 - NC 45 - NC 46 - NC 47 - NC 48 - GND

Functional Features

• Block Erase: The MT29F64G08CECCBH1-12ITZ:C TR supports block erase operations, allowing for efficient management of data storage.
• Page Program: It enables fast and reliable programming of data at the page level, ensuring efficient utilization of memory space.
• Read Retry: This feature enhances the reliability of data retrieval by automatically retrying read operations in case of errors.
• Wear-Leveling: The NAND flash memory incorporates wear-leveling algorithms to evenly distribute write and erase cycles across memory blocks, prolonging the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample space for data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance suitable for demanding applications.
• Low power consumption helps conserve battery life.
• Compact package facilitates integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of write and erase cycles, which may affect its lifespan.
• Susceptible to data corruption: Improper handling or power interruptions during write operations can lead to data loss or corruption.

Working Principles

The MT29F64G08CECCBH1-12ITZ:C TR utilizes NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell stores data by trapping electric charges within a floating gate. These charges represent binary information (0s and 1s). To read data