MT46V64M8BN-5B:F

Product Overview

Category

The MT46V64M8BN-5B:F belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage: The MT46V64M8BN-5B:F offers a capacity of 64 megabits (8 megabytes), allowing for efficient storage of large amounts of data.
• Fast data access: With a speed rating of 5B, this DRAM chip provides quick access to stored information, enhancing overall system performance.
• Low power consumption: The MT46V64M8BN-5B:F is designed to operate at low voltage levels, minimizing energy consumption and extending battery life in portable devices.

Package and Quantity

This product is available in a standard BGA (Ball Grid Array) package. Each package contains one MT46V64M8BN-5B:F chip.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 64 Megabits (8 Megabytes)
• Speed Rating: 5B
• Voltage: Low power operation
• Package Type: BGA

Pin Configuration

The MT46V64M8BN-5B:F follows a standard pin configuration. The detailed pinout is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. BA0#
31. BA1#
32. VSS

Functional Features

The MT46V64M8BN-5B:F offers the following functional features:

• Random Access: Allows for quick and efficient retrieval of data stored in the memory.
• Refresh Cycle: Automatically refreshes the stored data to prevent loss or corruption.
• Burst Mode: Supports burst read and write operations, enabling faster data transfer.
• Low Power Standby: Enters a low-power standby mode when not actively accessed, reducing energy consumption.

Advantages and Disadvantages

Advantages

• High storage capacity for efficient data handling.
• Fast access speed enhances overall system performance.
• Low power consumption extends battery life in portable devices.
• Supports burst mode for faster data transfer.

Disadvantages

• Requires periodic refresh cycles to maintain data integrity.
• Limited compatibility with certain older systems due to package type.

Working Principles

The MT46V64M8BN-5B:F operates based on the principles of dynamic random access memory. It stores data as electrical charges in tiny capacitors within the chip. These charges need to be periodically refreshed to prevent them from dissipating. When data is requested, the chip activates the appropriate circuitry to retrieve and transmit the stored information.

Application Field Plans

The MT46V64M8BN-5B:F is widely used in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Mobile phones and tablets - Gaming consoles - Networking equipment

Its high storage capacity, fast access speed, and low power consumption make it suitable for applications that require efficient data handling and processing.

Alternative Models

For users seeking alternative options, the following DRAM chips can be considered: - MT46V64M8BN-6: Similar to the MT46V64M8BN-5B:F but with a slightly lower speed rating. - MT46V64M8BN-5B:A: A variant with different packaging options, suitable for specific system requirements. - MT46V64M8BN-5B:G: Another variant with enhanced temperature tolerance for industrial applications.

These alternative models offer similar functionality and can be chosen based on specific project requirements.

In conclusion, the MT46V64M8BN-5B:F is a high-density, fast-access dynamic random access memory chip used in various electronic devices. Its characteristics, pin configuration, functional features, advantages, and disadvantages make it a versatile choice for applications requiring efficient data storage and retrieval.