Micron Technology Inc.
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MT46V64M8TG-6T L:F
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MT46V64M8TG-6T L:F

Basic Information Overview

  • Category: Memory module
  • Use: Storage and retrieval of digital information in electronic devices
  • Characteristics: High-speed, non-volatile, random access memory (RAM)
  • Package: Integrated circuit (IC) chip
  • Essence: Dynamic random access memory (DRAM) module
  • Packaging/Quantity: Typically sold in trays or reels containing multiple units

Specifications

  • Part Number: MT46V64M8TG-6T L:F
  • Organization: 64 Meg x 8
  • Voltage: 2.5V
  • Speed: 6 nanoseconds (ns)
  • Temperature Range: Commercial (0°C to +70°C)
  • RoHS Compliance: Yes

Detailed Pin Configuration

The MT46V64M8TG-6T L:F memory module has a total of 66 pins. The pin configuration is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. A16
  37. A17
  38. A18
  39. VSS
  40. WE#
  41. CAS#
  42. RAS#
  43. CS#
  44. CKE
  45. BA0
  46. BA1
  47. VDD
  48. DQM0
  49. DQM1
  50. VSS
  51. CLK
  52. VDD
  53. DQ16
  54. DQ17
  55. DQ18
  56. DQ19
  57. DQ20
  58. DQ21
  59. DQ22
  60. DQ23
  61. VSS
  62. DQ24
  63. DQ25
  64. DQ26
  65. DQ27
  66. VDD

Functional Features

  • High-speed data transfer and access times
  • Non-volatile memory retains data even when power is removed
  • Random access capability allows for efficient storage and retrieval of information
  • Low power consumption for improved energy efficiency
  • Wide temperature range for versatile usage in various electronic devices

Advantages and Disadvantages

Advantages: - Fast data transfer speeds - Large storage capacity - Low power consumption - Versatile temperature range

Disadvantages: - Relatively higher cost compared to other memory options - Limited lifespan due to the nature of dynamic memory cells

Working Principles

The MT46V64M8TG-6T L:F memory module operates based on the principles of dynamic random access memory (DRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information needs to be periodically refreshed to maintain its integrity. When the device requires access to specific data, it sends appropriate signals to the memory module, which retrieves and transfers the requested information.

Detailed Application Field Plans

The MT46V64M8TG-6T L:F memory module finds applications in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Networking equipment 5. Consumer electronics (e.g., smartphones, tablets)

Detailed and Complete Alternative Models

Some alternative models to the MT46V64M8TG-6T L:F memory module include: 1. MT47H64M8CF-25E: Similar specifications but with a different package type 2. MT48LC64M8A2P-75: Higher speed and lower voltage variant 3. MT41K64M16JT-125: Double data rate (DDR) version with increased capacity

Note: This is not an exhaustive list, and there are several other alternative models available in the market.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT46V64M8TG-6T L:F en soluciones técnicas

  1. Question: What is the capacity of the MT46V64M8TG-6T L:F memory module?
    Answer: The MT46V64M8TG-6T L:F has a capacity of 64 megabytes (MB).

  2. Question: What is the speed rating of the MT46V64M8TG-6T L:F memory module?
    Answer: The MT46V64M8TG-6T L:F operates at a speed of 6 nanoseconds (ns).

  3. Question: What type of memory interface does the MT46V64M8TG-6T L:F use?
    Answer: The MT46V64M8TG-6T L:F uses a synchronous dynamic random-access memory (SDRAM) interface.

  4. Question: Can the MT46V64M8TG-6T L:F be used in both commercial and industrial applications?
    Answer: Yes, the MT46V64M8TG-6T L:F is designed for both commercial and industrial applications.

  5. Question: What is the operating voltage range of the MT46V64M8TG-6T L:F?
    Answer: The MT46V64M8TG-6T L:F operates within a voltage range of 2.5 to 2.75 volts.

  6. Question: Does the MT46V64M8TG-6T L:F support burst mode operation?
    Answer: Yes, the MT46V64M8TG-6T L:F supports burst mode operation for efficient data transfer.

  7. Question: Can the MT46V64M8TG-6T L:F be used in high-temperature environments?
    Answer: Yes, the MT46V64M8TG-6T L:F is designed to operate in high-temperature environments, making it suitable for industrial applications.

  8. Question: What is the pin configuration of the MT46V64M8TG-6T L:F?
    Answer: The MT46V64M8TG-6T L:F has a 66-pin TSOP-II package with a specific pin configuration for easy integration into circuit designs.

  9. Question: Is the MT46V64M8TG-6T L:F compatible with other memory modules?
    Answer: Yes, the MT46V64M8TG-6T L:F is compatible with other SDRAM modules that adhere to the same industry standards.

  10. Question: Can the MT46V64M8TG-6T L:F be used in both single and dual-rank configurations?
    Answer: Yes, the MT46V64M8TG-6T L:F can be used in both single and dual-rank configurations, providing flexibility in system design.