Micron Technology Inc.
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MT47H128M4CB-3:B TR
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MT47H128M4CB-3:B TR

Product Overview

Category

MT47H128M4CB-3:B TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Compact size

Package

MT47H128M4CB-3:B TR is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

MT47H128M4CB-3:B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of memory chips.

Specifications

  • Memory Type: DDR4 SDRAM
  • Capacity: 128 Megabytes (MB)
  • Speed: 3 Gigabits per second (Gbps)
  • Organization: 4 Megabits x 4 banks x 8 bits
  • Voltage: 1.2 Volts (V)
  • Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H128M4CB-3:B TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. DM0
  45. DM1
  46. VSS
  47. DQS0#
  48. DQS0
  49. VSS
  50. DQSN0
  51. VSS
  52. DQSN1
  53. VSS
  54. DQS1
  55. VSS
  56. DQSN2
  57. VSS
  58. DQSN3
  59. VSS
  60. DQS2
  61. VSS
  62. DQSN4
  63. VSS
  64. DQSN5
  65. VSS
  66. DQS3
  67. VSS
  68. DQSN6
  69. VSS
  70. DQSN7
  71. VSS
  72. VREF

Functional Features

  • High-speed data transfer
  • Error correction capabilities
  • Auto-refresh and self-refresh modes
  • On-die termination (ODT) for improved signal integrity
  • Burst mode operation for efficient data access

Advantages and Disadvantages

Advantages

  • Fast data transfer speeds
  • Large storage capacity
  • Low power consumption
  • Compact size

Disadvantages

  • Relatively higher cost compared to other memory options
  • Limited compatibility with older devices

Working Principles

MT47H128M4CB-3:B TR operates based on the principles of DDR4 SDRAM technology. It utilizes a synchronous interface and advanced circuitry to enable high-speed data transfer between the memory module and the host device.

Detailed Application Field Plans

MT47H128M4CB-3:B TR is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to MT47H128M4CB-3:B TR include: - MT47H64M16HR-25E IT:H - MT47H256M8EB-25E IT:E - MT47H512M8EB-25E IT:E - MT47H1G8FB-25E IT:E

These alternative models offer similar functionality and characteristics, providing options for different memory capacity requirements.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT47H128M4CB-3:B TR en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of MT47H128M4CB-3:B TR in technical solutions:

  1. Question: What is the capacity of the MT47H128M4CB-3:B TR memory module?
    Answer: The MT47H128M4CB-3:B TR has a capacity of 128 megabytes (MB).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT47H128M4CB-3:B TR is typically 2.5V to 2.75V.

  3. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The MT47H128M4CB-3:B TR supports a maximum clock frequency of 333 MHz.

  4. Question: Is this memory module compatible with DDR3 technology?
    Answer: Yes, the MT47H128M4CB-3:B TR is a DDR3 SDRAM memory module.

  5. Question: Can this memory module be used in laptops or desktop computers?
    Answer: Yes, the MT47H128M4CB-3:B TR can be used in both laptops and desktop computers, as long as they support DDR3 memory.

  6. Question: What is the CAS latency of this memory module?
    Answer: The CAS latency of the MT47H128M4CB-3:B TR is CL9.

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the MT47H128M4CB-3:B TR does not support ECC.

  8. Question: What is the form factor of this memory module?
    Answer: The MT47H128M4CB-3:B TR has a small outline dual in-line memory module (SODIMM) form factor.

  9. Question: Can this memory module be used in servers or workstations?
    Answer: Yes, the MT47H128M4CB-3:B TR can be used in servers and workstations that support DDR3 SODIMM modules.

  10. Question: Is this memory module suitable for high-performance applications?
    Answer: While the MT47H128M4CB-3:B TR is a reliable memory module, it may not be ideal for extremely high-performance applications. It is more commonly used in general computing and mobile devices.

Please note that these answers are based on general information about the MT47H128M4CB-3:B TR memory module. For specific technical details and compatibility, it is always recommended to refer to the manufacturer's documentation or consult with a qualified professional.