MT47H256M8EB-25E IT:C

Product Overview

Category

MT47H256M8EB-25E IT:C belongs to the category of semiconductor memory products.

Use

This product is primarily used as a memory component in electronic devices such as computers, smartphones, and other digital devices.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Compact package size

Package

MT47H256M8EB-25E IT:C is packaged in a small form factor, typically in a surface mount technology (SMT) package. The specific package type may vary depending on the manufacturer.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT47H256M8EB-25E IT:C is commonly available in reels or trays, with varying quantities depending on the manufacturer's packaging specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 8 Meg x 8 bits
• Speed Grade: 25E (operating frequency of 400 MHz)
• Interface: Double Data Rate (DDR) interface
• Supply Voltage: 2.5V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H256M8EB-25E IT:C is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. VSS
45. CLK
46. CKE
47. DQS
48. DM
49. VSS
50. VDD

Functional Features

• High-speed data transfer with DDR interface
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings

Advantages and Disadvantages

Advantages

• Fast data transfer speeds enhance overall system performance
• Large storage capacity allows for storing a significant amount of data
• Low power consumption helps to extend battery life in portable devices
• Reliable data retention ensures data integrity over time
• Compact package size enables integration into space-constrained designs

Disadvantages

• Limited compatibility with older systems that do not support DDR interface
• Higher cost compared to other memory technologies like NAND flash

Working Principles

MT47H256M8EB-25E IT:C operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers and employs a double data rate (DDR) interface for high-speed operation. The memory cells store data in the form of electrical charges, which are refreshed periodically to maintain data integrity.

Detailed Application Field Plans

MT47H256M8EB-25E IT:C finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Smartphones and tablets - Gaming consoles - Networking equipment - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT47H256M8EB-25E IT:C include: - MT47H128M8BT-25E IT:C - MT47H512M8HQ-25E IT:C - MT47H1024M16HR-25E IT:C - MT47H2048M32HR-25E IT:C

These alternative models may vary in terms of capacity, organization, speed grade, and other specifications, providing flexibility to meet different system requirements.

*Note: The