MT47H64M8CB-37E:B

Product Overview

Category

MT47H64M8CB-37E:B belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and mobile phones for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Wide operating temperature range
• Reliable performance

Package

MT47H64M8CB-37E:B is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval in various electronic devices.

Packaging/Quantity

MT47H64M8CB-37E:B is typically packaged in trays or reels and is available in different quantities depending on customer requirements.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabytes (MB)
• Organization: 64 Megabits x 8
• Speed: 1333 Megahertz (MHz)
• Voltage: 1.5 Volts (V)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The detailed pin configuration of MT47H64M8CB-37E:B is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. DQ12
17. DQ13
18. DQ14
19. DQ15
20. VSS
21. NC
22. NC
23. NC
24. A0
25. A1
26. A2
27. A3
28. A4
29. A5
30. A6
31. A7
32. VSS
33. A8
34. A9
35. A10
36. A11
37. A12
38. A13
39. A14
40. A15
41. VSS
42. BA0
43. BA1
44. RAS#
45. CAS#
46. WE#
47. CS#
48. VSS
49. DM0
50. DM1
51. VREF
52. VDD

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Error correction code (ECC) support for data reliability

Advantages and Disadvantages

Advantages

• Fast data transfer rate enhances overall system performance
• Low power consumption prolongs battery life in portable devices
• Compact size allows for integration in space-constrained designs
• Wide operating temperature range ensures reliable operation in various environments

Disadvantages

• Limited capacity compared to higher-end memory modules
• Compatibility may vary with different device architectures
• Higher cost per unit compared to lower-capacity memory options

Working Principles

MT47H64M8CB-37E:B operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When data needs to be accessed, the memory controller sends appropriate signals to read or write data from/to specific memory locations.

Detailed Application Field Plans

MT47H64M8CB-37E:B finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers and workstations - Mobile phones and tablets - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT47H64M8CB-37E:B include: - MT47H64M16HR-25E:A - MT47H64M16HR-3IT:E - MT47H64M16HR-3IT:H - MT47H64M16HR-3IT:K

These alternative models provide different capacities, speeds, and voltage options to cater to diverse application requirements.

In conclusion, MT47H64M8CB-37E:B is a DDR3 SDRAM chip primarily used for high-speed data storage and retrieval in various electronic devices. It offers advantages such as fast performance, low power consumption, and compact size. However