MT47H64M8CB-37V:B

Product Overview

Category

MT47H64M8CB-37V:B belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and other computing systems that require high-speed data storage and retrieval.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Reliable performance
• Compact package size

Package

MT47H64M8CB-37V:B is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage and retrieval capabilities for various computing systems.

Packaging/Quantity

MT47H64M8CB-37V:B is typically packaged in trays or reels, with each package containing a specific quantity of memory modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabytes (MB)
• Organization: 64 Megabits x 8
• Voltage: 1.35 Volts (V)
• Speed: 1333 Megahertz (MHz)
• CAS Latency: 9
• Refresh Rate: 8K cycles/32ms

Detailed Pin Configuration

The pin configuration of MT47H64M8CB-37V:B is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power Supply Voltage | | 2 | DQ0 | Data Input/Output Bit 0 | | 3 | DQ1 | Data Input/Output Bit 1 | | ... | ... | ... | | 66 | VSS | Ground |

Functional Features

• High-speed data access and transfer
• Auto-refresh and self-refresh capabilities
• On-die termination (ODT) for improved signal integrity
• Burst mode operation for efficient data transfer
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for more data to be stored in a smaller space.
• Fast data access and transfer rates enhance system performance.
• Low power consumption helps to conserve energy.
• Reliable performance ensures data integrity and system stability.
• Compact package size enables compatibility with various computing systems.

Disadvantages

• Limited capacity compared to higher-end memory modules.
• Relatively slower data transfer rates compared to newer memory technologies.

Working Principles

MT47H64M8CB-37V:B operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain data integrity. When data is requested, it is accessed by reading the charge stored in the capacitors.

Detailed Application Field Plans

MT47H64M8CB-37V:B can be used in a wide range of applications, including: - Personal computers - Laptops and notebooks - Servers and workstations - Networking equipment - Industrial control systems - Embedded systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT47H64M8CB-37V:B include: - MT47H64M16HR-25E:B - MT47H64M32HR-3IT:B - MT47H64M64HR-3IT:B - MT47H64M128HR-3IT:B

These alternative models provide varying capacities and speeds to cater to different system requirements.

Note: The content provided above is a sample and may not reflect the actual specifications or details of MT47H64M8CB-37V:B. Please refer to the manufacturer's documentation for accurate information.