MT48LC2M32B2TG-55:G TR

Product Overview

Category

The MT48LC2M32B2TG-55:G TR belongs to the category of dynamic random-access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in various electronic devices, such as computers, servers, and networking equipment.

Characteristics

• High-speed operation: The MT48LC2M32B2TG-55:G TR offers fast data access and transfer rates, making it suitable for applications that require quick processing.
• Large storage capacity: With a capacity of 2 megabits (2Mb), this DRAM chip can store a significant amount of data.
• Low power consumption: The product is designed to operate efficiently with minimal power requirements, contributing to energy-saving initiatives.
• RoHS compliant: The MT48LC2M32B2TG-55:G TR meets the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Package and Quantity

The MT48LC2M32B2TG-55:G TR is available in a compact surface-mount package. Each package contains a single chip.

Specifications

• Organization: 2M words x 32 bits
• Supply voltage: 3.3V
• Access time: 55 nanoseconds (ns)
• Refresh mode: Self-refresh
• Operating temperature range: -40°C to +85°C
• Pin count: 86 pins

Detailed Pin Configuration

The pin configuration of the MT48LC2M32B2TG-55:G TR is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | A0-A20 | Address inputs | | 3 | DQ0-DQ31 | Data input/output | | 4 | WE | Write enable | | 5 | CAS | Column address strobe | | 6 | RAS | Row address strobe | | ... | ... | ... | | 86 | VSS | Ground |

Functional Features

• Fast data access: The MT48LC2M32B2TG-55:G TR offers quick read and write operations, enabling efficient data processing.
• Self-refresh capability: This feature allows the chip to maintain data integrity even during power-saving modes.
• Burst mode support: The product supports burst mode, allowing for consecutive data transfers without the need for repeated address inputs.

Advantages

• High-speed operation enables faster data processing.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption contributes to energy efficiency.
• RoHS compliance ensures environmental friendliness.

Disadvantages

• Relatively high access time compared to some newer DRAM technologies.
• Limited compatibility with certain legacy systems due to its specific pin configuration.

Working Principles

The MT48LC2M32B2TG-55:G TR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain data integrity. When data is accessed, the appropriate row and column addresses are provided, allowing the retrieval or storage of information.

Detailed Application Field Plans

The MT48LC2M32B2TG-55:G TR finds applications in various fields, including: 1. Computer systems: Used as main memory in desktops, laptops, and servers. 2. Networking equipment: Employed for packet buffering and caching in routers and switches. 3. Telecommunications: Utilized in base stations and network infrastructure for data storage and processing.

Detailed and Complete Alternative Models

1. MT48LC4M32B2TG-55:G TR: Similar to the MT48LC2M32B2TG-55:G TR, but with a larger capacity of 4 megabits (4Mb).
2. MT48LC8M32B2TG-55:G TR: Offers double the capacity of the MT48LC2M32B2TG-55:G TR, with 8 megabits (8Mb) of storage.
3. MT48LC16M32B2TG-55:G TR: Provides even greater capacity with 16 megabits (16Mb), suitable for more demanding applications.

In conclusion, the MT48LC2M32B2TG-55:G TR is a dynamic random-access memory chip that offers high-speed operation, large storage capacity, and low power consumption. It finds applications in various electronic devices and is available in alternative models with different capacities.