N25Q128A13E1440E

Product Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics: High capacity, fast read/write speeds, low power consumption
• Package: Surface mount package
• Essence: Flash memory chip
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Capacity: 128 Megabits (16 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Maximum Clock Frequency: 108 MHz
• Erase/Program Time: 4 ms (typical)
• Data Retention: 20 years (minimum)

Pin Configuration

The N25Q128A13E1440E has a total of 8 pins:

1. Chip Select (/CS) - Active low input used to enable/disable the device
2. Serial Clock (SCK) - Input for synchronizing data transfer
3. Serial Data Input (SI) - Input for sending data to the device
4. Serial Data Output (SO) - Output for receiving data from the device
5. Hold (/HOLD) - Input used to pause ongoing operations
6. Write Protect (/WP) - Input used to protect the memory from being written
7. Ground (GND) - Reference ground
8. Power Supply (VCC) - Power supply voltage input

Functional Features

• High-speed data transfer: The N25Q128A13E1440E supports a maximum clock frequency of 108 MHz, allowing for fast read and write operations.
• Low power consumption: The flash memory chip is designed to operate at low voltages, minimizing power consumption and extending battery life in portable devices.
• Reliable data retention: With a minimum data retention period of 20 years, the N25Q128A13E1440E ensures long-term storage of critical information.
• Flexible interface: The Serial Peripheral Interface (SPI) allows for easy integration with a wide range of microcontrollers and other devices.

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast read/write speeds for efficient data access - Low power consumption for energy-efficient operation - Long data retention period for reliable storage

Disadvantages: - Limited to serial communication interface, which may not be suitable for all applications - Relatively small capacity compared to other non-volatile memory options

Working Principles

The N25Q128A13E1440E is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior and representing a binary value. During read operations, the stored charges are measured to determine the stored data.

Detailed Application Field Plans

The N25Q128A13E1440E is commonly used in various electronic devices that require non-volatile memory for data storage and retrieval. Some potential application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras, and portable media players.
2. Automotive: Infotainment systems, navigation systems, and instrument clusters.
3. Industrial Control Systems: Programmable logic controllers (PLCs), human-machine interfaces (HMIs), and data loggers.
4. Networking Equipment: Routers, switches, and network attached storage (NAS) devices.
5. Medical Devices: Patient monitoring systems, medical imaging equipment, and diagnostic devices.

Detailed and Complete Alternative Models

1. N25Q064A11E1240E: 64 Megabit (8 Megabyte) capacity, similar specifications and features.
2. N25Q256A13E1440E: 256 Megabit (32 Megabyte) capacity, higher storage capacity than N25Q128A13E1440E.
3. N25Q512A13E1440E: 512 Megabit (64 Megabyte) capacity, higher storage capacity than N25Q128A13E1440E.

These alternative models offer different capacities to suit varying application requirements while maintaining similar functionality and characteristics.

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