N25Q128A13ESE40E

Basic Information Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High-speed data transfer
  • Low power consumption
  • Large storage capacity
• Package: Surface Mount Technology (SMT)
• Essence: Flash memory chip
• Packaging/Quantity: Individual chip

Specifications

• Manufacturer: Micron Technology Inc.
• Memory Type: Serial NOR Flash
• Capacity: 128 Megabits (16 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Time: 4ms/0.5ms (typical)
• Data Retention: 20 years (typical)

Detailed Pin Configuration

The N25Q128A13ESE40E has a total of 8 pins, which are as follows:

1. Chip Select (/CS): Enables communication with the device when pulled low.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Receives data from the external device.
4. Serial Data Output (SO): Transmits data to the external device.
5. Hold (/HOLD): Pauses ongoing operations when pulled low.
6. Write Protect (/WP): Protects the memory from being written when pulled low.
7. Ground (GND): Common ground reference.
8. Power Supply (VCC): Power input for the device.

Functional Features

• High-speed read and write operations
• Sector erase and byte/page program functionality
• Software and hardware protection mechanisms
• Efficient power management features
• Flexible addressing modes for easy integration

Advantages

• Fast data transfer speeds enhance overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity allows for storing a significant amount of data.
• Compact SMT package enables easy integration into various electronic devices.

Disadvantages

• Limited write endurance compared to other non-volatile memory technologies.
• Relatively higher cost per unit compared to some alternative memory options.
• Vulnerable to physical damage, such as electrostatic discharge (ESD).

Working Principles

The N25Q128A13ESE40E utilizes the Serial Peripheral Interface (SPI) protocol to communicate with the host device. It stores data using flash memory technology, which relies on the trapping and releasing of electrons within floating gate transistors. This allows for non-volatile data storage even when power is removed from the device.

Detailed Application Field Plans

The N25Q128A13ESE40E is commonly used in various electronic devices that require non-volatile memory for data storage and retrieval. Some typical application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., control systems, data loggers) - Networking devices (e.g., routers, switches)

Detailed and Complete Alternative Models

1. N25Q064A13ESE40E: 64 Megabit (8 Megabyte) capacity variant of the same series.
2. N25Q256A13ESE40E: 256 Megabit (32 Megabyte) capacity variant of the same series.
3. W25Q128JVSIQ: Similar capacity and functionality from Winbond Electronics.

Note: This is not an exhaustive list, and there may be other alternative models available in the market.

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