N25Q256A13E1240E

Basic Information Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics:
  • High capacity
  • Fast read/write speeds
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Flash memory chip
• Packaging/Quantity: Typically sold in reels or trays containing multiple chips

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Operations:
  • Sector Erase: 4 kilobytes
  • Block Erase: 64 kilobytes
  • Chip Erase: Full capacity
• Read/Write Speeds:
  • Fast Read: Up to 108 MHz
  • Fast Program: 1.8 milliseconds per page
  • Fast Erase: 60 milliseconds per sector

Detailed Pin Configuration

The N25Q256A13E1240E chip has a total of 16 pins, each serving a specific function. The pin configuration is as follows:

1. VCC: Power supply voltage
2. HOLD: Suspends ongoing operations
3. WP: Write protect input
4. RESET: Resets the device to default state
5. SIO0: Serial data input/output
6. SIO1: Dual/Quad SPI data input/output
7. SIO2: Quad SPI data input/output
8. SIO3: Quad SPI data input/output
9. NC: No connection
10. GND: Ground
11. CLK: Serial clock input
12. /CS: Chip select input
13. DQ0: Data input/output 0
14. DQ1: Data input/output 1
15. DQ2: Data input/output 2
16. DQ3: Data input/output 3

Functional Features

• High-speed data transfer using SPI interface
• Efficient memory management with sector, block, and chip erase operations
• Reliable data retention with built-in error correction codes (ECC)
• Flexible write protection options for enhanced security
• Low power consumption for extended battery life in portable devices

Advantages and Disadvantages

Advantages

• Large storage capacity for storing a significant amount of data
• Fast read/write speeds enable quick access to stored information
• Low power consumption helps conserve energy in battery-powered devices
• Compact package size allows for easy integration into various electronic systems

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per unit compared to traditional storage solutions
• Susceptible to physical damage or data loss if mishandled or exposed to extreme conditions

Working Principles

The N25Q256A13E1240E is based on the NAND flash memory technology. It utilizes a series of floating-gate transistors to store digital data. The memory cells are organized into sectors and blocks, which can be individually erased or programmed. The Serial Peripheral Interface (SPI) enables communication between the chip and the host device, allowing for efficient data transfer.

Detailed Application Field Plans

The N25Q256A13E1240E chip finds applications in various fields, including: - Consumer Electronics: Used in smartphones, tablets, digital cameras, and gaming consoles for data storage. - Automotive: Integrated into infotainment systems, instrument clusters, and advanced driver-assistance systems (ADAS) for reliable data storage. - Industrial Automation: Employed in programmable logic controllers (PLCs), human-machine interfaces (HMIs), and data loggers for storing critical operational data. - Networking: Utilized in routers, switches, and network attached storage (NAS) devices for storing configuration settings and firmware updates.

Detailed and Complete Alternative Models

• N25Q128A13E1240E: 128 Megabit version of the same flash memory chip.
• N25Q512A13E1240E: 512 Megabit version with higher capacity.
• N25Q256A11E1240E: Similar chip with different specifications, including a different interface and voltage range.

Note: The alternative models mentioned above are just a few examples and not an exhaustive list.

This entry provides an overview of the N25Q256A13E1240E flash memory chip. It includes basic information about its category, use, characteristics, package, and essence. The specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models are also discussed.