N25Q256A81ESF40G

Basic Information Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics:
  • High capacity
  • Fast read/write speeds
  • Low power consumption
  • Reliable performance
• Package: SOP (Small Outline Package)
• Essence: Flash memory chip
• Packaging/Quantity: Individually packaged, quantity varies based on order size

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Time:
  • Sector Erase: 100 milliseconds
  • Page Program: 0.7 milliseconds per byte
• Data Retention: Up to 20 years

Detailed Pin Configuration

The N25Q256A81ESF40G has a total of 8 pins. The pin configuration is as follows:

1. Chip Select (/CS) - Active low input used to enable/disable the device.
2. Serial Clock (SCK) - Input for synchronizing data transfer.
3. Serial Data Input (SI) - Input for shifting in data.
4. Serial Data Output (SO) - Output for shifting out data.
5. Hold (/HOLD) - Input used to pause serial communication.
6. Write Protect (/WP) - Input used to protect the memory from being written.
7. Ground (GND) - Reference ground connection.
8. Power Supply (VCC) - Power supply input.

Functional Features

• High-speed data transfer using SPI interface
• Efficient sector erase and page program operations
• Flexible write protection options
• Deep power-down mode for low power consumption
• Advanced security features for data protection
• Reliable and durable flash memory technology

Advantages

• Large storage capacity for storing a significant amount of data
• Fast read/write speeds enable quick data access and updates
• Low power consumption extends battery life in portable devices
• High reliability ensures data integrity and longevity
• Compact SOP package allows for easy integration into various electronic devices

Disadvantages

• Limited capacity compared to other higher-density memory options
• Relatively slower erase and program times compared to some alternatives
• Higher cost per unit compared to lower-capacity memory chips

Working Principles

The N25Q256A81ESF40G is based on the NOR flash memory technology. It utilizes a serial peripheral interface (SPI) for communication with the host device. The chip stores data in non-volatile memory cells, which retain information even when power is removed. The SPI interface enables fast and efficient data transfer between the memory chip and the host device.

Detailed Application Field Plans

The N25Q256A81ESF40G is widely used in various applications that require non-volatile memory storage. Some common application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial control systems (e.g., PLCs, HMI panels) - Networking equipment (e.g., routers, switches) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

• N25Q128A13EF840E: 128 Megabit (16 Megabyte) capacity, similar features and specifications
• N25Q512A83EF840F: 512 Megabit (64 Megabyte) capacity, higher capacity option with similar features
• N25Q256A11EF840E: 256 Megabit (32 Megabyte) capacity, alternative package option with similar features

(Note: The above alternative models are provided for reference and may vary based on availability and specific requirements.)

This entry provides a comprehensive overview of the N25Q256A81ESF40G flash memory chip. It includes basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.