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JAN2N2880

JAN2N2880

Product Overview

  • Category: Transistor
  • Use: Amplification and switching in electronic circuits
  • Characteristics: High gain, low noise, and high frequency capability
  • Package: TO-39 metal can package
  • Essence: NPN bipolar junction transistor
  • Packaging/Quantity: Typically sold in packs of 10 or 25 units

Specifications

  • Type: NPN
  • Maximum Power Dissipation: 625mW
  • Collector-Emitter Voltage: 40V
  • Collector-Base Voltage: 75V
  • Emitter-Base Voltage: 6V
  • Collector Current: 600mA
  • DC Current Gain (hFE): 100 to 300
  • Transition Frequency (ft): 150MHz

Detailed Pin Configuration

  1. Collector (C)
  2. Base (B)
  3. Emitter (E)

Functional Features

  • High current gain
  • Low noise
  • Wide frequency response

Advantages and Disadvantages

Advantages

  • High gain
  • Low noise
  • Suitable for high-frequency applications

Disadvantages

  • Limited power dissipation
  • Relatively low collector-emitter voltage rating

Working Principles

The JAN2N2880 operates as a current-controlled switch or amplifier. When a small current flows into the base terminal, it controls a much larger current between the collector and emitter terminals.

Detailed Application Field Plans

  • Audio amplifiers
  • Radio frequency (RF) amplifiers
  • Oscillator circuits
  • Switching circuits

Detailed and Complete Alternative Models

  • 2N2222
  • 2N3904
  • BC547
  • BC548
  • BC549

This comprehensive entry provides an in-depth understanding of the JAN2N2880 transistor, covering its specifications, features, advantages, disadvantages, working principles, application fields, and alternative models.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de JAN2N2880 en soluciones técnicas

  1. What is the JAN2N2880 transistor used for?

    • The JAN2N2880 transistor is commonly used in high-reliability applications such as military and aerospace systems due to its rugged construction and performance characteristics.
  2. What are the key specifications of the JAN2N2880 transistor?

    • The JAN2N2880 transistor typically has a maximum collector current of 600 mA, a maximum power dissipation of 625 mW, and a voltage rating of 30 V.
  3. What are the typical applications of the JAN2N2880 transistor?

    • The JAN2N2880 transistor is often used in amplifier circuits, switching applications, and as a general-purpose transistor in electronic equipment requiring high reliability.
  4. What are the temperature ratings for the JAN2N2880 transistor?

    • The JAN2N2880 transistor is typically rated for operation over a temperature range of -65°C to +200°C, making it suitable for harsh environmental conditions.
  5. Is the JAN2N2880 transistor suitable for high-frequency applications?

    • While the JAN2N2880 transistor can be used in moderate frequency applications, it is not specifically designed for high-frequency operation.
  6. What are the packaging options available for the JAN2N2880 transistor?

    • The JAN2N2880 transistor is commonly available in TO-18 metal can packages, which provide good thermal performance and mechanical ruggedness.
  7. Are there any known reliability issues with the JAN2N2880 transistor?

    • The JAN2N2880 transistor is known for its high reliability and rugged construction, making it well-suited for demanding applications.
  8. Can the JAN2N2880 transistor be used in radiation-prone environments?

    • Yes, the JAN2N2880 transistor is designed to withstand radiation exposure, making it suitable for use in nuclear and space applications.
  9. What are the recommended operating conditions for the JAN2N2880 transistor?

    • The JAN2N2880 transistor should be operated within its specified voltage, current, and temperature limits to ensure proper performance and reliability.
  10. Where can I find detailed technical information about the JAN2N2880 transistor?

    • Detailed technical information about the JAN2N2880 transistor can be found in its datasheet, which is typically available from the manufacturer or distributor's website.