Microsemi Corporation
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JAN2N3637
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JAN2N3637

Product Overview

  • Category: Transistor
  • Use: Amplification and switching in electronic circuits
  • Characteristics: High voltage, high current capability
  • Package: TO-18 metal can package
  • Essence: NPN silicon transistor
  • Packaging/Quantity: Typically sold in packs of 10 or 100 units

Specifications

  • Maximum Collector-Emitter Voltage: 60V
  • Maximum Collector-Base Voltage: 80V
  • Maximum Emitter-Base Voltage: 7V
  • Collector Current - Continuous: 0.5A
  • Power Dissipation: 625mW
  • Transition Frequency: 50MHz
  • Operating Temperature Range: -65°C to 200°C

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • High voltage and current capability
  • Low noise and distortion
  • Fast switching speed
  • Wide operating temperature range

Advantages and Disadvantages

Advantages

  • Versatile applications in amplification and switching circuits
  • Reliable performance in harsh environments
  • Low power dissipation

Disadvantages

  • Limited maximum collector current compared to some modern transistors
  • Relatively low transition frequency

Working Principles

The JAN2N3637 operates as a bipolar junction transistor (BJT), where the flow of current is controlled by the voltage applied at the base terminal. In amplification applications, small changes in the base current result in larger changes in the collector current, allowing for signal amplification. In switching applications, the transistor rapidly switches between on and off states based on the base voltage.

Detailed Application Field Plans

The JAN2N3637 is commonly used in audio amplifiers, power supplies, and general-purpose switching circuits. Its high voltage and current capabilities make it suitable for applications requiring robust performance in challenging conditions.

Detailed and Complete Alternative Models

  • 2N2222: Similar NPN transistor with lower voltage and current ratings
  • 2N3904: General-purpose NPN transistor with lower power dissipation
  • BC547: NPN transistor with similar characteristics but different pin configuration

This comprehensive entry provides an in-depth understanding of the JAN2N3637 transistor, covering its specifications, features, applications, and alternatives.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de JAN2N3637 en soluciones técnicas

  1. What is the JAN2N3637 transistor used for?

    • The JAN2N3637 transistor is commonly used in high-reliability applications such as military and aerospace systems due to its rugged construction and high performance.

  2. What are the key specifications of the JAN2N3637 transistor?

    • The JAN2N3637 is a PNP silicon transistor with a maximum collector-base voltage of 60V, a maximum collector current of 600mA, and a power dissipation of 625mW.

  3. Can the JAN2N3637 be used in audio amplifier circuits?

    • Yes, the JAN2N3637 can be used in low-power audio amplifier circuits due to its moderate power handling capabilities and low noise characteristics.

  4. Is the JAN2N3637 suitable for switching applications?

    • Yes, the JAN2N3637 can be used in low-frequency switching applications where moderate power handling is required.

  5. What are the temperature limitations of the JAN2N3637 transistor?

    • The JAN2N3637 has an operating temperature range of -65°C to +200°C, making it suitable for use in extreme environmental conditions.

  6. Does the JAN2N3637 require a heat sink for operation?

    • In most applications, the JAN2N3637 does not require a heat sink due to its moderate power dissipation capabilities. However, in high-power applications or elevated ambient temperatures, a heat sink may be necessary.

  7. Can the JAN2N3637 be used in automotive electronics?

    • While the JAN2N3637 is not specifically designed for automotive applications, it can be used in certain automotive electronic systems where reliability and ruggedness are critical.

  8. Are there any common failure modes associated with the JAN2N3637?

    • Common failure modes for the JAN2N3637 include thermal runaway at high temperatures and excessive current or voltage stress leading to breakdown.

  9. What are the typical gain characteristics of the JAN2N3637 transistor?

    • The JAN2N3637 has a moderate current gain (hfe) ranging from 100 to 300, making it suitable for a wide range of amplification applications.

  10. Where can I find detailed application notes for using the JAN2N3637 in technical solutions?

    • Detailed application notes for the JAN2N3637 can be found in the manufacturer's datasheet, which provides comprehensive information on recommended usage and circuit design considerations.