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PDTA113ET,215
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PDTA113ET,215

Product Category: Transistor

Basic Information Overview: - Category: NPN Bipolar Transistor - Use: Amplification and Switching - Characteristics: High voltage, low current, small package size - Package: SOT416 (SC-75) - Essence: Small signal transistor for general purpose applications - Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications: - Collector-Base Voltage (VCBO): 50V - Collector-Emitter Voltage (VCEO): 50V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Total Power Dissipation (PTOT): 250mW - Transition Frequency (fT): 200MHz - Operating Temperature Range (Tj): -55°C to +150°C

Detailed Pin Configuration: - Pin 1 (Emitter) - Pin 2 (Base) - Pin 3 (Collector)

Functional Features: - High voltage capability - Low leakage current - Fast switching speed - Small package size

Advantages: - Suitable for high voltage applications - Compact and space-saving design - Wide operating temperature range

Disadvantages: - Limited collector current compared to some alternatives - Sensitive to static electricity due to small package size

Working Principles: The PDTA113ET,215 operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplification circuits - Signal processing circuits - Switching circuits in portable devices

Detailed and Complete Alternative Models: - BC847B,215 - MMBT3904LT1G - 2N3904

This comprehensive entry provides a detailed overview of the PDTA113ET,215, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de PDTA113ET,215 en soluciones técnicas

  1. What is PDTA113ET,215?

    • PDTA113ET,215 is a NPN resistor-equipped transistor designed for use in general-purpose amplifier and switching applications.

  2. What are the key features of PDTA113ET,215?

    • The key features of PDTA113ET,215 include its high current gain, low collector-emitter saturation voltage, and built-in resistor for biasing.

  3. What are the typical applications of PDTA113ET,215?

    • Typical applications of PDTA113ET,215 include audio amplification, signal processing, and general switching circuits.

  4. What is the maximum collector current of PDTA113ET,215?

    • The maximum collector current of PDTA113ET,215 is 100mA.

  5. What is the maximum power dissipation of PDTA113ET,215?

    • The maximum power dissipation of PDTA113ET,215 is 200mW.

  6. What is the voltage rating for PDTA113ET,215?

    • The voltage rating for PDTA113ET,215 is 50V.

  7. What is the thermal resistance of PDTA113ET,215?

    • The thermal resistance of PDTA113ET,215 is typically 625°C/W.

  8. What are the recommended operating conditions for PDTA113ET,215?

    • The recommended operating conditions for PDTA113ET,215 include a collector current of 10mA to 100mA and a collector-emitter voltage of 45V.

  9. Can PDTA113ET,215 be used in high-frequency applications?

    • No, PDTA113ET,215 is not suitable for high-frequency applications due to its limited frequency response.

  10. Are there any specific layout considerations when using PDTA113ET,215 in a circuit?

    • It is recommended to minimize the length of the connections to PDTA113ET,215 and provide adequate heat sinking if operating at high currents or power levels.