PDTA143EM,315

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Small size, high gain, low power consumption
Package: SOT416 (SC-75)
Essence: NPN bipolar junction transistor
Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Collector-Base Voltage (VCBO): 50V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• Power Dissipation (Ptot): 200mW
• Transition Frequency (fT): 250MHz

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High current gain
• Low voltage drop
• Fast switching speed

Advantages

• Small package size
• Suitable for high-density surface mount applications
• Low power consumption

Disadvantages

• Limited maximum collector current compared to larger transistors
• Lower power dissipation capability compared to larger transistors

Working Principles

The PDTA143EM,315 operates as a semiconductor device, utilizing the movement of charge carriers within the transistor's base region to control the flow of current between its emitter and collector terminals.

Detailed Application Field Plans

1. Audio Amplification: Utilized in small audio amplifiers due to its compact size and low power consumption.
2. Switching Circuits: Employed in various electronic switching circuits due to its fast switching speed and low voltage drop characteristics.

Detailed and Complete Alternative Models

1. BC847B,215: Similar NPN transistor with comparable specifications and package type.
2. MMBT3904,215: Another NPN transistor with similar characteristics and package type.

This comprehensive entry provides an in-depth understanding of the PDTA143EM,315, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.