PSMN1R5-30YL,115

Product Overview

Category

The PSMN1R5-30YL,115 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The PSMN1R5-30YL,115 is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices.

Packaging/Quantity

It is commonly packaged in reels or tubes, with varying quantities depending on the supplier.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 100A
• On-Resistance (RDS(on)): 1.5mΩ
• Power Dissipation (PD): 200W
• Gate-Source Voltage (VGS): ±20V

Detailed Pin Configuration

The PSMN1R5-30YL,115 typically has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High current-carrying capability
• Low conduction losses
• Suitable for high-frequency switching applications
• Enhanced thermal performance

Advantages

• Low on-resistance leads to reduced power dissipation
• High current-handling capacity
• Fast switching speed improves efficiency
• Enhanced thermal characteristics ensure reliability

Disadvantages

• Higher cost compared to standard MOSFETs
• Requires careful handling due to sensitivity to static electricity

Working Principles

The PSMN1R5-30YL,115 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The PSMN1R5-30YL,115 is widely used in the following applications: - Switch-mode power supplies - Motor control systems - Automotive electronics - Industrial automation - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the PSMN1R5-30YL,115 include: - IRF540N - FDP8870 - STP55NF06L - AUIRF3710

In conclusion, the PSMN1R5-30YL,115 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications. Its low on-resistance, high current-handling capability, and fast switching speed make it an ideal choice for demanding electronic systems.

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