2PB710AS,115

Product Overview

• Category: Electronic Component
• Use: Power Transistor
• Characteristics: High power handling capacity, low on-resistance, fast switching speed
• Package: TO-263AB
• Essence: N-channel MOSFET
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 100V
• Current Rating: 120A
• Power Dissipation: 200W
• On-Resistance: 4.5mΩ
• Gate-Source Voltage (Max): ±20V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Functional Features

• High current capability
• Low gate charge
• Avalanche energy specified
• Enhanced body diode dV/dt and di/dt capability

Advantages

• High power handling capacity
• Fast switching speed
• Low on-resistance
• Suitable for high-frequency applications

Disadvantages

• Sensitive to static electricity
• Requires careful handling during installation

Working Principles

The 2PB710AS,115 is a power transistor that operates based on the principles of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field which controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

• Switching power supplies
• Motor control
• Class D audio amplifiers
• DC-DC converters
• Solar inverters

Detailed and Complete Alternative Models

• IRF1405PBF
• FDP8878
• STP80NF70

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