NXP USA Inc.
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MRF7S21080HR5
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MRF7S21080HR5

Product Overview

Category

The MRF7S21080HR5 belongs to the category of high-power RF transistors.

Use

It is used in high-frequency applications such as radar systems, wireless communication, and industrial heating equipment.

Characteristics

  • High power handling capability
  • High frequency operation
  • Low distortion
  • High efficiency

Package

The MRF7S21080HR5 is available in a ceramic package with metal flange for efficient heat dissipation.

Essence

The essence of MRF7S21080HR5 lies in its ability to amplify high-frequency signals with high power handling capacity.

Packaging/Quantity

The MRF7S21080HR5 is typically packaged individually and is available in various quantities depending on the supplier.

Specifications

  • Frequency Range: 2110 - 2170 MHz
  • Power Output: 80 Watts
  • Gain: 14 dB
  • Efficiency: 55%
  • Voltage: 28V

Detailed Pin Configuration

The MRF7S21080HR5 has a detailed pin configuration with specific connections for gate, drain, and source terminals. Refer to the datasheet for the exact pinout details.

Functional Features

  • High power amplification
  • Broadband operation
  • High linearity
  • Thermal stability

Advantages

  • High power output
  • Wide frequency range
  • Suitable for high-efficiency applications
  • Excellent thermal performance

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal management

Working Principles

The MRF7S21080HR5 operates based on the principles of RF amplification using field-effect transistor technology. It amplifies input RF signals to deliver high-power output with minimal distortion.

Detailed Application Field Plans

The MRF7S21080HR5 is ideal for use in: - Radar systems - Wireless communication infrastructure - Industrial heating equipment - High-power RF amplifiers

Detailed and Complete Alternative Models

  • MRF7S21110HSR5
  • MRF7S21170HSR5
  • MRF7S21230HSR5
  • MRF7S21350HSR5

These alternative models offer similar high-power RF amplification capabilities within different frequency ranges.

In conclusion, the MRF7S21080HR5 is a high-power RF transistor designed for demanding high-frequency applications, offering high efficiency and power handling capabilities. Its wide frequency range and excellent thermal performance make it suitable for various RF amplification needs.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MRF7S21080HR5 en soluciones técnicas

  1. What is the MRF7S21080HR5?

    • The MRF7S21080HR5 is a high-power RF transistor designed for use in applications such as base stations, wireless infrastructure, and other RF power amplification systems.

  2. What is the maximum power output of the MRF7S21080HR5?

    • The MRF7S21080HR5 can deliver up to 80 watts of continuous wave (CW) power output at frequencies up to 960 MHz.

  3. What are the key features of the MRF7S21080HR5?

    • Some key features of the MRF7S21080HR5 include high power gain, high efficiency, and excellent linearity, making it suitable for demanding RF power amplifier applications.

  4. What are the typical applications for the MRF7S21080HR5?

    • Typical applications for the MRF7S21080HR5 include cellular base station amplifiers, broadcast transmitters, and other high-power RF amplification systems.

  5. What is the operating voltage range of the MRF7S21080HR5?

    • The MRF7S21080HR5 operates within a voltage range of 12-28 volts, making it compatible with a wide range of power supply systems.

  6. Does the MRF7S21080HR5 require external matching networks?

    • Yes, the MRF7S21080HR5 typically requires external matching networks to optimize its performance in specific RF amplifier designs.

  7. Is the MRF7S21080HR5 suitable for broadband applications?

    • Yes, the MRF7S21080HR5 is designed for broadband operation, making it suitable for multi-band and wideband RF amplifier designs.

  8. What thermal management considerations should be taken into account when using the MRF7S21080HR5?

    • Proper heat sinking and thermal management are crucial for maximizing the performance and reliability of the MRF7S21080HR5 in high-power RF amplifier applications.

  9. Are evaluation boards or reference designs available for the MRF7S21080HR5?

    • Yes, evaluation boards and reference designs are often available from the manufacturer to aid in the development and testing of RF power amplifier circuits using the MRF7S21080HR5.

  10. Where can I find detailed datasheets and application notes for the MRF7S21080HR5?

    • Detailed datasheets and application notes for the MRF7S21080HR5 can typically be found on the manufacturer's website or through authorized distributors.