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PDTA113ES,126
Product Overview
- Belongs to: Transistor
- Category: Bipolar (BJT) Transistors - Pre-Biased
- Use: Amplification and switching applications
- Characteristics: High current gain, low voltage drop, pre-biased for convenience
- Package: SOT-416 (SC-75)
- Essence: Small signal amplification
- Packaging/Quantity: Tape & Reel (3000 per reel)
Specifications
- Type: NPN
- Collector-Base Voltage (VCBO): 50V
- Collector-Emitter Voltage (VCEO): 50V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 100mA
- Total Power Dissipation (PTOT): 200mW
Detailed Pin Configuration
- Pin 1 (Emitter): Connected to the Emitter
- Pin 2 (Base): Connected to the Base
- Pin 3 (Collector): Connected to the Collector
Functional Features
- Pre-Biased: Eliminates the need for external biasing components
- High Current Gain: Efficient signal amplification
- Low Voltage Drop: Minimizes power loss
Advantages
- Convenient pre-biased configuration
- Small package size for space-constrained designs
- High current gain for effective signal amplification
Disadvantages
- Limited maximum collector current compared to other transistors
- Relatively low collector-emitter voltage rating
Working Principles
PDTA113ES,126 operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.
Detailed Application Field Plans
This transistor is suitable for use in various small signal amplification and switching applications, including audio amplifiers, signal processing circuits, and sensor interfaces.
Detailed and Complete Alternative Models
- BC847BS,115
- BC858BL,115
- BC847BTT1G
Note: The alternative models listed above are similar pre-biased NPN transistors with comparable specifications and package types.
This comprehensive entry provides a detailed overview of PDTA113ES,126, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de PDTA113ES,126 en soluciones técnicas
Sure, here are 10 common questions and answers related to the application of PDTA113ES,126 in technical solutions:
What is PDTA113ES,126?
- PDTA113ES,126 is a high-performance NPN resistor-equipped transistor in a small SOT666 (SC-88) Surface-Mounted Device (SMD) plastic package.
What are the typical applications of PDTA113ES,126?
- It is commonly used in general-purpose switching and amplification applications in various technical solutions.
What is the maximum collector current of PDTA113ES,126?
- The maximum collector current is 100 mA.
What is the voltage rating for PDTA113ES,126?
- The maximum voltage rating is 50V.
What are the key features of PDTA113ES,126?
- Some key features include low collector-emitter saturation voltage, high current gain, and low power dissipation.
Can PDTA113ES,126 be used in high-frequency applications?
- Yes, it can be used in high-frequency applications due to its fast switching speed.
What are the recommended operating conditions for PDTA113ES,126?
- The recommended operating conditions include a collector current of 10 mA to 100 mA and an operating temperature range of -55°C to +150°C.
Is PDTA113ES,126 suitable for battery-powered applications?
- Yes, it is suitable for battery-powered applications due to its low power dissipation.
Does PDTA113ES,126 require external resistors for biasing?
- No, PDTA113ES,126 comes with built-in resistors for biasing, simplifying circuit design.
Are there any specific layout considerations when using PDTA113ES,126 in PCB designs?
- It is recommended to minimize the length of the traces connected to the transistor to reduce parasitic effects and ensure stable performance.
I hope these answers provide the information you were looking for! If you have any more questions, feel free to ask.