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PHD18NQ10T,118
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PHD18NQ10T,118

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Advanced power management solution
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Voltage Rating: 100V
  • Current Rating: 18A
  • RDS(ON): 10mΩ
  • Gate Charge: 25nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The PHD18NQ10T,118 features a standard pin configuration with the following pins: 1. Gate 2. Drain 3. Source

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance for reliability
  • Robust design for rugged applications

Advantages and Disadvantages

Advantages: - High efficiency - Low power dissipation - Wide operating temperature range

Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles

The PHD18NQ10T,118 operates based on the principle of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in various applications.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • PHD16NQ10T,118
  • PHD20NQ10T,118
  • PHD18NQ10L,118

Note: The alternative models listed above offer similar performance characteristics and can be considered as substitutes for the PHD18NQ10T,118.

This comprehensive entry provides an in-depth understanding of the PHD18NQ10T,118, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de PHD18NQ10T,118 en soluciones técnicas

  1. What is the maximum drain-source voltage of PHD18NQ10T,118?

    • The maximum drain-source voltage is 100V.

  2. What is the continuous drain current of PHD18NQ10T,118?

    • The continuous drain current is 18A.

  3. What is the on-resistance of PHD18NQ10T,118?

    • The on-resistance is typically 10mΩ.

  4. Can PHD18NQ10T,118 be used in automotive applications?

    • Yes, it is suitable for automotive applications.

  5. What is the operating temperature range of PHD18NQ10T,118?

    • The operating temperature range is -55°C to 175°C.

  6. Is PHD18NQ10T,118 RoHS compliant?

    • Yes, it is RoHS compliant.

  7. What type of package does PHD18NQ10T,118 come in?

    • It comes in a standard D2PAK package.

  8. Does PHD18NQ10T,118 have built-in protection features?

    • Yes, it has built-in overcurrent protection.

  9. What are the typical applications for PHD18NQ10T,118?

    • Typical applications include motor control, power supplies, and DC-DC converters.

  10. Is there a recommended gate driver for PHD18NQ10T,118?

    • A suitable gate driver would be one that can provide the necessary drive voltage and current for the MOSFET.