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2N5550RLRP
Product Overview
- Category: Transistor
- Use: Amplification and switching in electronic circuits
- Characteristics: NPN bipolar junction transistor, low power, high voltage, medium current
- Package: TO-92
- Essence: Small signal amplifier
- Packaging/Quantity: Reel, 2500 units
Specifications
- Collector-Emitter Voltage (VCEO): 160V
- Collector-Base Voltage (VCBO): 180V
- Emitter-Base Voltage (VEBO): 6V
- Collector Current (IC): 600mA
- Power Dissipation (PD): 625mW
- Transition Frequency (fT): 150MHz
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Emitter (E)
- Base (B)
- Collector (C)
Functional Features
- High voltage capability
- Low leakage current
- Fast switching speed
- Suitable for audio amplification and general purpose applications
Advantages and Disadvantages
Advantages
- Versatile usage in various electronic circuits
- High voltage tolerance
- Low noise performance
Disadvantages
- Limited current handling capacity
- Sensitive to temperature variations
Working Principles
The 2N5550RLRP operates as a current-controlled switch or amplifier. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals, allowing it to amplify or switch electronic signals.
Detailed Application Field Plans
- Audio amplifiers
- Signal processing circuits
- Oscillator circuits
- Voltage regulators
- Switching circuits
Detailed and Complete Alternative Models
- 2N4401
- BC547
- BC548
- 2N3904
- 2N2222
This comprehensive entry provides detailed information about the 2N5550RLRP transistor, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
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What is the 2N5550RLRP transistor used for?
- The 2N5550RLRP is a general-purpose PNP bipolar junction transistor commonly used in amplification and switching applications.
What are the typical operating conditions for the 2N5550RLRP?
- The 2N5550RLRP operates under a maximum collector-emitter voltage of 160V and a collector current of 600mA.
Can the 2N5550RLRP be used for audio amplification?
- Yes, the 2N5550RLRP is suitable for small-signal audio amplification due to its low noise and high gain characteristics.
How do I connect the 2N5550RLRP in a common-emitter amplifier circuit?
- In a common-emitter configuration, the emitter is grounded, the base is the input, and the collector is the output.
What are some alternative transistors to the 2N5550RLRP?
- Alternatives include the 2N4403, BC557, and BC558, which have similar characteristics and can be used as substitutes in many applications.
What is the power dissipation rating of the 2N5550RLRP?
- The 2N5550RLRP has a power dissipation rating of 625mW, making it suitable for various low to medium power applications.
Can the 2N5550RLRP be used in high-frequency applications?
- While it can be used in moderate frequency applications, it may not be suitable for very high-frequency designs due to its transition frequency.
What are the typical thermal characteristics of the 2N5550RLRP?
- The thermal resistance from junction to case (RθJC) is approximately 83°C/W, and from junction to ambient (RθJA) is around 200°C/W.
Is the 2N5550RLRP suitable for use in temperature-sensitive environments?
- It can operate within a temperature range of -55°C to 150°C, making it suitable for a wide range of environments.
Can the 2N5550RLRP be used in a Darlington pair configuration?
- Yes, the 2N5550RLRP can be used as the first stage in a Darlington pair to achieve higher current gain and lower saturation voltage.