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2N5771_D75Z
Product Overview
- Category: Transistor
- Use: Amplification and switching in electronic circuits
- Characteristics: High voltage, high current capability
- Package: TO-92
- Essence: NPN Bipolar Junction Transistor (BJT)
- Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Maximum Collector-Emitter Voltage: 160V
- Maximum Collector Current: 1A
- Power Dissipation: 625mW
- Transition Frequency: 30MHz
- Operating Temperature Range: -65°C to 200°C
Detailed Pin Configuration
- Collector (C): Pin 1
- Base (B): Pin 2
- Emitter (E): Pin 3
Functional Features
- High voltage and current capability
- Fast switching speed
- Low noise and distortion
Advantages and Disadvantages
Advantages
- Suitable for high-power applications
- Wide operating temperature range
- Versatile for various circuit designs
Disadvantages
- Sensitive to temperature variations
- Requires careful handling due to static sensitivity
Working Principles
The 2N5771_D75Z operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, allowing for amplification or switching of signals.
Detailed Application Field Plans
- Audio amplifiers
- Power supply circuits
- Motor control systems
- RF amplifiers
Detailed and Complete Alternative Models
- 2N3904
- BC547
- 2N2222
- BC548
This information provides a comprehensive overview of the 2N5771_D75Z transistor, including its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2N5771_D75Z en soluciones técnicas
What is the 2N5771_D75Z transistor used for?
- The 2N5771_D75Z is a general-purpose NPN bipolar junction transistor commonly used for amplification and switching applications.
What are the typical operating conditions for the 2N5771_D75Z?
- The 2N5771_D75Z typically operates at a maximum collector-emitter voltage of 40V and a maximum collector current of 1A.
Can the 2N5771_D75Z be used for audio amplification?
- Yes, the 2N5771_D75Z can be used for small-signal audio amplification due to its low noise and high gain characteristics.
What are some common circuit configurations for the 2N5771_D75Z?
- Common circuit configurations include common emitter, common base, and common collector configurations for various amplification and switching purposes.
Is the 2N5771_D75Z suitable for use in low-power switching applications?
- Yes, the 2N5771_D75Z is suitable for low-power switching applications due to its fast switching speed and moderate power handling capabilities.
What are the thermal considerations when using the 2N5771_D75Z in a design?
- It is important to consider proper heat sinking and thermal management to ensure the 2N5771_D75Z operates within its specified temperature range for reliable performance.
Are there any specific precautions to be taken when designing with the 2N5771_D75Z?
- Precautions should be taken to avoid exceeding the maximum ratings for voltage, current, and power dissipation to prevent damage to the transistor.
Can the 2N5771_D75Z be used in high-frequency applications?
- While the 2N5771_D75Z has moderate frequency capabilities, it may not be suitable for very high-frequency applications due to its transition frequency limitations.
What are the typical gain characteristics of the 2N5771_D75Z?
- The 2N5771_D75Z typically has a high current gain (hFE) ranging from 100 to 300, making it suitable for many amplification applications.
Where can I find detailed specifications and application notes for the 2N5771_D75Z?
- Detailed specifications and application notes for the 2N5771_D75Z can be found in the manufacturer's datasheet and application notes, which provide comprehensive information on its usage and performance characteristics.