The BUV27G is a power transistor belonging to the category of discrete semiconductor devices. This device is commonly used in electronic circuits for various applications due to its specific characteristics and performance.
The BUV27G features the following specifications: - Collector-Emitter Voltage (Vce): 400V - Collector Current (Ic): 10A - Power Dissipation (Pd): 125W - DC Current Gain (hFE): 15-60 - Transition Frequency (ft): 4MHz
The BUV27G has a standard TO-220AB package with three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)
The BUV27G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electrical signals.
The BUV27G is commonly used in the following application fields: - Power supplies - Motor control - Audio amplifiers - Switching regulators
Some alternative models to the BUV27G include: - BUV27A - BUV27B - BUV27C - BUV27D
In summary, the BUV27G is a versatile power transistor suitable for various high-power applications, offering advantages such as low power dissipation and fast switching speed. However, it is important to consider its limited current gain range and higher cost compared to alternative models when selecting it for a specific application.
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What is BUV27G?
What are the key features of BUV27G?
What are the typical applications of BUV27G?
What is the maximum collector current of BUV27G?
What is the maximum power dissipation of BUV27G?
What is the thermal resistance of BUV27G?
What are the recommended operating conditions for BUV27G?
Is BUV27G suitable for high-frequency applications?
Does BUV27G require external protection circuitry?
Where can I find detailed specifications and application notes for BUV27G?