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MUN5216T1G
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MUN5216T1G

Product Overview

Category

The MUN5216T1G belongs to the category of NPN Bipolar Transistors.

Use

It is commonly used as a general-purpose amplifier in various electronic circuits.

Characteristics

  • Low power dissipation
  • High current gain
  • Low noise

Package

The MUN5216T1G is available in a small SOT-23 surface mount package.

Essence

This transistor is essential for amplifying weak signals in electronic devices.

Packaging/Quantity

It is typically sold in reels containing 3000 units.

Specifications

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 45V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 225mW
  • Transition Frequency (fT): 250MHz

Detailed Pin Configuration

The MUN5216T1G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed

Advantages and Disadvantages

Advantages

  • Low power dissipation
  • Small package size
  • Suitable for high-frequency applications

Disadvantages

  • Limited collector current compared to other transistors
  • Relatively low breakdown voltage

Working Principles

The MUN5216T1G operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small signal at the base terminal.

Detailed Application Field Plans

The MUN5216T1G is widely used in: - Audio amplifiers - Oscillator circuits - RF amplifiers - Switching circuits

Detailed and Complete Alternative Models

Some alternative models to the MUN5216T1G include: - 2N3904 - BC547 - 2SC945

In conclusion, the MUN5216T1G is a versatile NPN bipolar transistor with characteristics suitable for various electronic applications, especially those requiring low power dissipation and high current gain.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MUN5216T1G en soluciones técnicas

  1. What is MUN5216T1G?

    • MUN5216T1G is a NPN bipolar junction transistor (BJT) designed for general purpose amplifier and switching applications.

  2. What are the key features of MUN5216T1G?

    • The key features include low saturation voltage, high current gain, and low equivalent on-resistance.

  3. What are the typical applications of MUN5216T1G?

    • Typical applications include audio amplification, signal processing, motor control, and power management in various electronic devices.

  4. What is the maximum collector current of MUN5216T1G?

    • The maximum collector current is 500mA.

  5. What is the maximum collector-emitter voltage of MUN5216T1G?

    • The maximum collector-emitter voltage is 40V.

  6. What is the thermal resistance of MUN5216T1G?

    • The thermal resistance from junction to ambient is 357°C/W.

  7. Is MUN5216T1G RoHS compliant?

    • Yes, MUN5216T1G is RoHS compliant, making it suitable for environmentally friendly designs.

  8. Can MUN5216T1G be used in high-frequency applications?

    • While MUN5216T1G is not specifically designed for high-frequency applications, it can still be used in moderate frequency ranges.

  9. What are the recommended operating conditions for MUN5216T1G?

    • The recommended operating conditions include a collector current of 100mA, a collector-emitter voltage of 20V, and an ambient temperature range of -55°C to 150°C.

  10. Where can I find detailed technical specifications and application notes for MUN5216T1G?

    • Detailed technical specifications and application notes can be found in the datasheet provided by the manufacturer or distributor of MUN5216T1G.