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UNR212100L
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UNR212100L

Product Overview

Belongs to: Semiconductor Devices
Category: Power Transistor
Use: Amplification and Switching
Characteristics: High voltage, high current capability
Package: TO-220F
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Voltage: 400V
  • Current: 10A
  • Power Dissipation: 50W
  • Gain (hFE): 25 - 160
  • Frequency: 2MHz

Detailed Pin Configuration

  1. Emitter
  2. Base
  3. Collector

Functional Features

  • High voltage capability
  • Low saturation voltage
  • Fast switching speed
  • Complementary to UNR212200L

Advantages

  • Suitable for high power applications
  • Reliable and durable
  • Wide range of operating frequencies

Disadvantages

  • Higher power dissipation compared to some alternatives
  • Sensitive to overvoltage conditions

Working Principles

The UNR212100L operates as a bipolar junction transistor, utilizing the movement of charge carriers within a semiconductor to amplify or switch electronic signals.

Detailed Application Field Plans

  • Power supplies
  • Audio amplifiers
  • Motor control circuits
  • Lighting systems

Detailed and Complete Alternative Models

  • UNR212200L
  • MJE13005
  • 2N3055
  • TIP31C

This comprehensive entry provides an in-depth understanding of the UNR212100L, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de UNR212100L en soluciones técnicas

  1. What is UNR212100L?

    • UNR212100L is a high-power, low-resistance NPN silicon transistor designed for use in various technical solutions.

  2. What are the key features of UNR212100L?

    • The key features include high power dissipation, low collector-emitter saturation voltage, and low thermal resistance.

  3. In what technical solutions can UNR212100L be used?

    • UNR212100L can be used in applications such as power amplifiers, motor control, switching circuits, and voltage regulators.

  4. What is the maximum power dissipation of UNR212100L?

    • The maximum power dissipation is typically around 30 watts.

  5. What is the typical collector-emitter saturation voltage of UNR212100L?

    • The typical collector-emitter saturation voltage is around 1.0 volts.

  6. What is the recommended operating temperature range for UNR212100L?

    • The recommended operating temperature range is usually between -55°C to 150°C.

  7. Does UNR212100L require any specific heat sinking or thermal management?

    • Yes, due to its high power dissipation, UNR212100L may require appropriate heat sinking or thermal management measures.

  8. Can UNR212100L be used in automotive applications?

    • Yes, UNR212100L is suitable for use in automotive electronic systems and power control modules.

  9. What are the typical load conditions for UNR212100L in power amplifier applications?

    • In power amplifier applications, UNR212100L is often used with load impedances ranging from 4 to 16 ohms.

  10. Are there any specific considerations for circuit design when using UNR212100L?

    • It's important to consider proper biasing, current and voltage ratings, and thermal considerations when designing circuits with UNR212100L.