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DTA123JEBTL
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DTA123JEBTL

Product Overview

Category

The DTA123JEBTL belongs to the category of semiconductor devices.

Use

It is used as a general-purpose digital transistor in electronic circuits.

Characteristics

  • Small form factor
  • Low power consumption
  • High switching speed

Package

The DTA123JEBTL comes in a small surface-mount package.

Essence

This product serves as a key component in digital circuit design, offering high performance and reliability.

Packaging/Quantity

The DTA123JEBTL is typically packaged in reels containing a specific quantity, such as 3000 units per reel.

Specifications

  • Collector-Base Voltage: 50V
  • Collector Current: 100mA
  • Total Power Dissipation: 150mW
  • Transition Frequency: 200MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Emitter
  2. Base
  3. Collector

Functional Features

  • High voltage capability
  • Fast switching speed
  • Low saturation voltage

Advantages

  • Compact size
  • Suitable for high-speed digital applications
  • Low power consumption

Disadvantages

  • Limited maximum current and voltage ratings
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The DTA123JEBTL operates as a bipolar junction transistor (BJT), utilizing its three terminals to control the flow of current through the device. When biased appropriately, it can act as an amplifier or a switch in electronic circuits.

Detailed Application Field Plans

The DTA123JEBTL is commonly used in: - Logic gates - Digital amplifiers - Signal processing circuits

Detailed and Complete Alternative Models

  • DTC123JEBTL
  • DTD123JEBTL
  • DTF123JEBTL

In conclusion, the DTA123JEBTL is a versatile digital transistor with compact dimensions and high-speed performance, making it suitable for various digital circuit applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de DTA123JEBTL en soluciones técnicas

  1. What is DTA123JEBTL?

    • DTA123JEBTL is a high-power NPN transistor designed for use in general-purpose amplifier and switching applications.

  2. What are the key specifications of DTA123JEBTL?

    • The key specifications include a maximum collector current of 1A, a maximum collector-emitter voltage of 50V, and a maximum power dissipation of 625mW.

  3. In what types of technical solutions can DTA123JEBTL be used?

    • DTA123JEBTL can be used in various technical solutions such as audio amplifiers, signal amplification circuits, and low-power switching applications.

  4. What are the typical operating conditions for DTA123JEBTL?

    • The typical operating conditions include a collector current of 100mA, a collector-emitter voltage of 5V, and a base current of 10mA.

  5. How does DTA123JEBTL compare to similar transistors in its class?

    • DTA123JEBTL offers a balance of high power dissipation, current handling capability, and voltage ratings, making it suitable for a wide range of applications.

  6. Are there any specific considerations for using DTA123JEBTL in high-frequency applications?

    • While DTA123JEBTL can be used in moderate frequency applications, it may not be suitable for very high-frequency designs due to its transition frequency characteristics.

  7. What are the recommended thermal management practices for DTA123JEBTL?

    • Adequate heat sinking and proper PCB layout are recommended to ensure optimal thermal performance and reliability.

  8. Can DTA123JEBTL be used in automotive or industrial applications?

    • Yes, DTA123JEBTL can be utilized in automotive and industrial applications where its specifications meet the requirements of the specific design.

  9. What are the typical failure modes associated with DTA123JEBTL?

    • Common failure modes include thermal runaway under excessive current or temperature conditions, as well as voltage breakdown under overvoltage stress.

  10. Where can I find detailed application notes and reference designs for using DTA123JEBTL in technical solutions?

    • Detailed application notes and reference designs can be found in the datasheet provided by the manufacturer, as well as in technical literature related to transistor applications.