MSM5117400F-60T3-K-7

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics: High-speed, low-power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Tape and reel, 1000 units per reel

Specifications

• Part Number: MSM5117400F-60T3-K-7
• Organization: 1M words x 4 bits
• Operating Voltage: 3.3V ± 0.3V
• Access Time: 60 ns
• Refresh Mode: Auto-refresh
• Power Supply Current: 50 mA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MSM5117400F-60T3-K-7 has a total of 28 pins. The pin configuration is as follows:

| Pin No. | Name | Description | |---------|------|-------------| | 1 | Vcc | Power supply voltage | | 2 | A0 | Address input | | 3 | A1 | Address input | | 4 | A2 | Address input | | 5 | A3 | Address input | | 6 | A4 | Address input | | 7 | A5 | Address input | | 8 | A6 | Address input | | 9 | A7 | Address input | | 10 | A8 | Address input | | 11 | A9 | Address input | | 12 | A10 | Address input | | 13 | A11 | Address input | | 14 | A12 | Address input | | 15 | A13 | Address input | | 16 | A14 | Address input | | 17 | A15 | Address input | | 18 | DQ0 | Data input/output | | 19 | DQ1 | Data input/output | | 20 | DQ2 | Data input/output | | 21 | DQ3 | Data input/output | | 22 | WE | Write enable | | 23 | CAS | Column address strobe | | 24 | RAS | Row address strobe | | 25 | CKE | Clock enable | | 26 | CS | Chip select | | 27 | NC | No connection | | 28 | GND | Ground |

Functional Features

• High-speed operation: The MSM5117400F-60T3-K-7 offers a fast access time of 60 ns, making it suitable for applications that require quick data retrieval.
• Low-power consumption: This memory chip is designed to minimize power usage, making it energy-efficient and suitable for battery-powered devices.
• Auto-refresh mode: The chip supports auto-refresh functionality, ensuring data integrity by automatically refreshing the stored information at regular intervals.
• Wide operating temperature range: With an operating temperature range of -40°C to +85°C, the MSM5117400F-60T3-K-7 can withstand extreme environmental conditions.

Advantages and Disadvantages

Advantages: - High-speed performance - Low-power consumption - Auto-refresh capability - Wide operating temperature range

Disadvantages: - Limited storage capacity (1M words x 4 bits) - Requires external components for proper operation

Working Principles

The MSM5117400F-60T3-K-7 is a dynamic random access memory (DRAM) chip. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip uses an array of capacitors to store each bit of data. To read or write data, the chip utilizes address inputs, control signals, and a clock signal.

During a read operation, the desired memory location is selected by providing the appropriate address on the address pins. The chip then activates the row and column addresses specified by the inputs. The data stored at the selected location is then made available on the data output pins.

During a write operation, data is written to the selected memory location by providing the desired data on the data input pins. The chip activates the row and column addresses specified by the inputs and stores the data in the corresponding memory cell.

Detailed Application Field Plans

The MSM5117400F-60T3-K-7 can be used in various applications, including: 1. Computer systems: Used as main memory in desktop computers, laptops, and servers. 2. Consumer electronics: Integrated into gaming consoles, digital cameras, and portable media players for data storage purposes. 3