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VNN7NV04TR-E

VNN7NV04TR-E

Product Overview

Category

VNN7NV04TR-E belongs to the category of power MOSFETs.

Use

This product is primarily used in electronic circuits for switching applications, where it acts as a high-speed switch to control the flow of current.

Characteristics

  • High voltage capability: The VNN7NV04TR-E can handle high voltages, making it suitable for various power applications.
  • Low on-resistance: It exhibits low resistance when conducting current, resulting in minimal power loss and improved efficiency.
  • Fast switching speed: This MOSFET offers fast switching times, enabling rapid switching between on and off states.
  • Enhanced thermal performance: The device is designed to dissipate heat efficiently, ensuring reliable operation even under high-power conditions.

Package

The VNN7NV04TR-E comes in a compact and industry-standard TO-252 (DPAK) package. This package provides excellent thermal dissipation properties and ease of mounting on printed circuit boards.

Essence

The essence of VNN7NV04TR-E lies in its ability to provide efficient power switching capabilities with high voltage tolerance and low on-resistance.

Packaging/Quantity

This product is typically packaged in reels or tubes, containing a specific quantity of MOSFETs per package. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Drain-Source Voltage (VDSS): 40V
  • Continuous Drain Current (ID): 7A
  • On-Resistance (RDS(ON)): 0.045Ω (max)
  • Gate Threshold Voltage (VGS(TH)): 1.5V (typ)
  • Total Gate Charge (QG): 10nC (typ)
  • Power Dissipation (PD): 2.5W
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The VNN7NV04TR-E MOSFET has three pins:

  1. Gate (G): This pin controls the switching operation of the MOSFET.
  2. Drain (D): The main current flows through this pin.
  3. Source (S): It is connected to the ground or reference potential.

Functional Features

  • Low power loss: The low on-resistance of the VNN7NV04TR-E minimizes power dissipation, resulting in improved energy efficiency.
  • High-speed switching: With its fast switching speed, this MOSFET enables quick and precise control of current flow.
  • Enhanced thermal performance: The device's design ensures efficient heat dissipation, preventing overheating and ensuring reliable operation.
  • Wide operating temperature range: The VNN7NV04TR-E can withstand extreme temperatures, making it suitable for various environments.

Advantages and Disadvantages

Advantages

  • High voltage capability allows for versatile applications.
  • Low on-resistance reduces power loss and improves efficiency.
  • Fast switching speed enables precise control of current flow.
  • Excellent thermal performance ensures reliable operation under high-power conditions.

Disadvantages

  • May require additional circuitry for protection against overvoltage or overcurrent conditions.
  • Limited availability of alternative models from different manufacturers.

Working Principles

The VNN7NV04TR-E operates based on the principles of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). When a voltage is applied to the gate terminal, an electric field is created, allowing or blocking the flow of current between the drain and source terminals. By controlling the gate voltage, the MOSFET can be switched on or off, regulating the current flow through the device.

Detailed Application Field Plans

The VNN7NV04TR-E is widely used in various applications, including: - Power supplies - Motor control circuits - LED lighting systems - Switching regulators - Audio amplifiers - Automotive electronics

Detailed and Complete Alternative Models

While the VNN7NV04TR-E is a reliable power MOSFET, alternative models from different manufacturers can also be considered. Some popular alternatives include: - IRF540N by Infineon Technologies - FQP30N06L by Fairchild Semiconductor - STP55NF06L by STMicroelectronics - IRLZ44N by International Rectifier

These alternative models offer similar characteristics and performance, providing flexibility in choosing the most suitable MOSFET for specific applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de VNN7NV04TR-E en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of VNN7NV04TR-E in technical solutions:

  1. Question: What is VNN7NV04TR-E?
    Answer: VNN7NV04TR-E is a specific model of N-channel MOSFET transistor used in various electronic applications.

  2. Question: What is the voltage rating of VNN7NV04TR-E?
    Answer: The voltage rating of VNN7NV04TR-E is typically around 40 volts.

  3. Question: What is the maximum current that VNN7NV04TR-E can handle?
    Answer: VNN7NV04TR-E can handle a maximum continuous drain current of around 7 amperes.

  4. Question: Can VNN7NV04TR-E be used for switching applications?
    Answer: Yes, VNN7NV04TR-E is commonly used for switching applications due to its fast switching speed.

  5. Question: What is the typical on-resistance of VNN7NV04TR-E?
    Answer: The typical on-resistance of VNN7NV04TR-E is around 0.07 ohms.

  6. Question: Is VNN7NV04TR-E suitable for high-frequency applications?
    Answer: Yes, VNN7NV04TR-E has a low gate charge and is suitable for high-frequency applications.

  7. Question: Can VNN7NV04TR-E be used in automotive applications?
    Answer: Yes, VNN7NV04TR-E is designed to meet automotive industry standards and can be used in automotive applications.

  8. Question: Does VNN7NV04TR-E require any external protection diodes?
    Answer: No, VNN7NV04TR-E has built-in protection diodes for inductive loads.

  9. Question: What is the temperature range for VNN7NV04TR-E?
    Answer: VNN7NV04TR-E can operate within a temperature range of -55°C to 150°C.

  10. Question: Can VNN7NV04TR-E be used in low-power applications?
    Answer: Yes, VNN7NV04TR-E has a low threshold voltage and can be used in low-power applications.

Please note that these answers are general and may vary depending on specific application requirements.