SSM3J35MFV,L3F

Product Overview

Category

The SSM3J35MFV,L3F belongs to the category of semiconductor devices.

Use

It is used as a small signal MOSFET for various electronic applications.

Characteristics

• Low on-resistance
• Low voltage drive
• Small package size

Package

The SSM3J35MFV,L3F is available in a small, surface-mount package.

Essence

This MOSFET is essential for low-power electronic circuits and battery-operated devices.

Packaging/Quantity

The SSM3J35MFV,L3F is typically packaged in reels with a specific quantity per reel.

Specifications

• Drain-Source Voltage (VDS): 20V
• Continuous Drain Current (ID): 300mA
• Total Power Dissipation (PD): 200mW
• Gate-Source Voltage (VGS): ±8V
• On-Resistance (RDS(ON)): 2.5Ω (max)

Detailed Pin Configuration

The SSM3J35MFV,L3F has three pins: Drain, Source, and Gate. The pinout configuration is as follows: - Pin 1 (Drain) - Pin 2 (Gate) - Pin 3 (Source)

Functional Features

• Low power consumption
• Fast switching speed
• High input impedance

Advantages and Disadvantages

Advantages

• Small package size
• Low on-resistance
• Suitable for low-voltage applications

Disadvantages

• Limited maximum drain-source voltage
• Relatively low continuous drain current rating

Working Principles

The SSM3J35MFV,L3F operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SSM3J35MFV,L3F is commonly used in: - Portable electronic devices - Battery management systems - Low-power switching circuits

Detailed and Complete Alternative Models

Some alternative models to the SSM3J35MFV,L3F include: - SSM6J15MFV,L3G - SSM3K15MFV,L3F - SSM3J35MFV,L3T

In conclusion, the SSM3J35MFV,L3F is a small signal MOSFET with specific characteristics suitable for low-power electronic applications. Its compact size and low on-resistance make it ideal for portable and battery-operated devices.

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