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2N6660JTVP02
Product Category: Transistor
Basic Information Overview: - Category: Power MOSFET - Use: Amplification and switching in electronic circuits - Characteristics: High voltage capability, low on-resistance, fast switching speed - Package: TO-220AB - Essence: Power transistor for high-voltage applications - Packaging/Quantity: Typically packaged in reels of 1000 units
Specifications: - Drain-Source Voltage (Vdss): 200V - Continuous Drain Current (Id): 5.3A - On-Resistance (Rds(on)): 1.6Ω - Gate-Source Voltage (Vgs): ±20V - Power Dissipation (Pd): 75W
Detailed Pin Configuration: - Pin 1 (Gate): Input for controlling the transistor - Pin 2 (Drain): Output terminal for the transistor - Pin 3 (Source): Common terminal for the transistor
Functional Features: - High voltage capability allows for use in high-power applications - Low on-resistance minimizes power loss and heat generation - Fast switching speed enables efficient operation in switching circuits
Advantages: - Suitable for high-voltage applications - Low power dissipation - Fast switching speed
Disadvantages: - Relatively high on-resistance compared to some alternative models - Limited maximum gate-source voltage
Working Principles: The 2N6660JTVP02 operates based on the principles of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal.
Detailed Application Field Plans: - Power supplies - Motor control - Audio amplifiers - LED lighting systems
Detailed and Complete Alternative Models: - IRF540N - FQP30N06L - STP55NF06L
This comprehensive entry provides a detailed overview of the 2N6660JTVP02 power MOSFET, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2N6660JTVP02 en soluciones técnicas
What is the 2N6660JTVP02 transistor used for?
- The 2N6660JTVP02 is a high-voltage, high-speed N-channel power MOSFET designed for applications such as switching power supplies and motor control.
What are the key specifications of the 2N6660JTVP02?
- The 2N6660JTVP02 features a maximum drain-source voltage of 400V, a continuous drain current of 5A, and a low on-resistance for efficient power handling.
Can the 2N6660JTVP02 be used in high-frequency applications?
- Yes, the 2N6660JTVP02 is suitable for high-frequency switching due to its high-speed performance and low gate charge.
What are the typical applications for the 2N6660JTVP02?
- Typical applications include switch mode power supplies, DC-DC converters, motor drives, and other high-voltage, high-speed switching circuits.
Does the 2N6660JTVP02 require a heat sink for operation?
- Depending on the application and power dissipation, a heat sink may be necessary to ensure proper thermal management.
What is the maximum junction temperature of the 2N6660JTVP02?
- The 2N6660JTVP02 has a maximum junction temperature of 150°C, which should not be exceeded to maintain device reliability.
Is the 2N6660JTVP02 suitable for automotive applications?
- Yes, the 2N6660JTVP02 can be used in automotive systems such as electronic power steering, engine control, and other high-voltage automotive electronics.
What are the recommended gate drive requirements for the 2N6660JTVP02?
- The 2N6660JTVP02 requires a gate voltage sufficient to fully enhance the channel and minimize switching losses, typically around 10V.
Can the 2N6660JTVP02 be used in parallel to increase current handling capability?
- Yes, the 2N6660JTVP02 can be used in parallel to share current and improve overall power handling in high-current applications.
Are there any application notes or reference designs available for the 2N6660JTVP02?
- Yes, various application notes and reference designs are available from the manufacturer to assist in the proper implementation of the 2N6660JTVP02 in technical solutions.