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2N7002-E3
Product Overview
The 2N7002-E3 is a small-signal MOSFET transistor belonging to the category of electronic components. It is commonly used in various electronic circuits for switching and amplification purposes due to its low power consumption and high efficiency. The 2N7002-E3 is characterized by its small package size, low threshold voltage, and high current-carrying capability. It is typically available in surface-mount packages and is often sold in reels or tubes containing a specific quantity per package.
Specifications
- Voltage Rating: 60V
- Continuous Drain Current: 115mA
- Threshold Voltage: 1.0V - 2.5V
- Package Type: SOT-23
- Quantity per Package: Varies
Pin Configuration
The 2N7002-E3 features a standard SOT-23 package with three pins: gate (G), drain (D), and source (S).
Functional Features
The 2N7002-E3 offers fast switching speed, low on-resistance, and high input impedance, making it suitable for use in various electronic applications.
Advantages and Disadvantages
Advantages: - Low threshold voltage allows for efficient control in low-voltage applications. - Small package size enables space-efficient circuit designs. - High current-carrying capability supports diverse electronic applications.
Disadvantages: - Limited maximum voltage rating may not be suitable for high-power applications. - Sensitivity to static discharge requires careful handling during assembly.
Working Principles
The 2N7002-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Application Field Plans
The 2N7002-E3 finds extensive use in low-power electronic circuits such as signal amplification, level shifting, and power management. It is commonly employed in portable electronic devices, sensor interfaces, and battery-powered systems.
Alternative Models
- 2N7002LT1G: Similar specifications and package type.
- BS170: Higher voltage rating and current capacity.
In conclusion, the 2N7002-E3 is a versatile MOSFET transistor suitable for low-power electronic applications, offering a balance of performance and compactness.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2N7002-E3 en soluciones técnicas
Sure, here are 10 common questions and answers related to the application of 2N7002-E3 in technical solutions:
What is the maximum drain-source voltage (VDS) for 2N7002-E3?
- The maximum drain-source voltage for 2N7002-E3 is 60 volts.
What is the continuous drain current (ID) rating for 2N7002-E3?
- The continuous drain current rating for 2N7002-E3 is 300 mA.
Can 2N7002-E3 be used for low-power switching applications?
- Yes, 2N7002-E3 is suitable for low-power switching applications due to its low threshold voltage and low on-resistance.
What is the typical threshold voltage (VGS(th)) for 2N7002-E3?
- The typical threshold voltage for 2N7002-E3 is 1.0 volts.
Is 2N7002-E3 suitable for level shifting applications?
- Yes, 2N7002-E3 can be used for level shifting applications due to its low threshold voltage and compatibility with different logic levels.
What are the typical applications of 2N7002-E3 in electronic circuits?
- Typical applications of 2N7002-E3 include load switching, LED driving, small signal amplification, and level shifting.
Does 2N7002-E3 require a heat sink for normal operation?
- In most cases, 2N7002-E3 does not require a heat sink for normal operation due to its low power dissipation characteristics.
What is the typical on-resistance (RDS(on)) for 2N7002-E3?
- The typical on-resistance for 2N7002-E3 is 5 ohms at VGS = 10V.
Can 2N7002-E3 be used in battery-powered applications?
- Yes, 2N7002-E3 is suitable for battery-powered applications due to its low threshold voltage and low power consumption.
What are the key advantages of using 2N7002-E3 in technical solutions?
- The key advantages of using 2N7002-E3 include low threshold voltage, low on-resistance, small package size, and compatibility with various digital and analog circuits.