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2N7002K-T1-GE3

2N7002K-T1-GE3

Product Overview

Category:

The 2N7002K-T1-GE3 belongs to the category of small-signal field-effect transistors (FETs).

Use:

It is commonly used for switching and amplification applications in electronic circuits.

Characteristics:

  • Low threshold voltage
  • Low input capacitance
  • High input impedance
  • Small package size

Package:

The 2N7002K-T1-GE3 is typically available in a SOT-23 surface-mount package.

Essence:

This FET is essential for controlling the flow of current in various electronic devices and circuits.

Packaging/Quantity:

It is usually supplied in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 115mA
  • Power Dissipation (PD): 200mW
  • Threshold Voltage (VGS(th)): 0.8V - 3V
  • Input Capacitance (Ciss): 45pF
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2N7002K-T1-GE3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Fast switching speed
  • Low ON-resistance
  • High input impedance

Advantages

  • Small and compact package
  • Low threshold voltage allows for efficient control
  • Suitable for low-power applications

Disadvantages

  • Limited maximum drain-source voltage
  • Relatively low continuous drain current rating

Working Principles

The 2N7002K-T1-GE3 operates based on the field-effect principle, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This FET is widely used in: - Switching circuits - Amplifier circuits - Low-power electronic devices - Battery-powered applications

Detailed and Complete Alternative Models

Some alternative models to the 2N7002K-T1-GE3 include: - BS170 - IRF5305 - DMN10H220SK3

In conclusion, the 2N7002K-T1-GE3 is a versatile small-signal FET with characteristics suitable for various electronic applications, especially those requiring low power consumption and compact design.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2N7002K-T1-GE3 en soluciones técnicas

  1. What is the maximum drain-source voltage of 2N7002K-T1-GE3?

    • The maximum drain-source voltage of 2N7002K-T1-GE3 is 60V.
  2. What is the continuous drain current rating of 2N7002K-T1-GE3?

    • The continuous drain current rating of 2N7002K-T1-GE3 is 310mA.
  3. What is the threshold voltage of 2N7002K-T1-GE3?

    • The threshold voltage of 2N7002K-T1-GE3 typically ranges from 0.8V to 3V.
  4. Can 2N7002K-T1-GE3 be used for low-power switching applications?

    • Yes, 2N7002K-T1-GE3 is suitable for low-power switching applications due to its low threshold voltage and moderate drain current rating.
  5. Is 2N7002K-T1-GE3 suitable for level shifting applications?

    • Yes, 2N7002K-T1-GE3 can be used for level shifting applications due to its voltage compatibility and low threshold voltage.
  6. What are the typical applications of 2N7002K-T1-GE3 in technical solutions?

    • Typical applications include small signal switching, level shifting, and low-power control circuits.
  7. Does 2N7002K-T1-GE3 require a heat sink for normal operation?

    • No, 2N7002K-T1-GE3 typically does not require a heat sink for normal operation due to its low power dissipation.
  8. What is the package type of 2N7002K-T1-GE3?

    • 2N7002K-T1-GE3 comes in a SOT-23 package, which is suitable for surface mount applications.
  9. Can 2N7002K-T1-GE3 be used in battery-powered devices?

    • Yes, 2N7002K-T1-GE3 is suitable for use in battery-powered devices due to its low power requirements.
  10. Are there any specific layout considerations when using 2N7002K-T1-GE3 in a circuit?

    • It is important to minimize parasitic inductance and ensure proper gate drive to maximize the performance of 2N7002K-T1-GE3 in a circuit.