IRF640STRLPBF

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, motor control, and other high current switching circuits
• Characteristics: High voltage, high speed switching, low on-resistance
• Package: TO-220AB
• Essence: N-channel power MOSFET
• Packaging/Quantity: Available in reels of 2500 units

Specifications

• Voltage Rating: 200V
• Continuous Drain Current: 18A
• RDS(ON): 0.15Ω
• Gate Threshold Voltage: 2-4V
• Total Gate Charge: 30nC

Detailed Pin Configuration

• Pin 1 (G): Gate
• Pin 2 (D): Drain
• Pin 3 (S): Source

Functional Features

• Fast switching speed
• Low gate drive power
• High input impedance
• Avalanche energy specified

Advantages

• Low on-resistance
• High input impedance
• Suitable for high current switching applications

Disadvantages

• Higher gate threshold voltage compared to some alternative models
• Limited maximum voltage rating compared to some alternatives

Working Principles

The IRF640STRLPBF operates based on the principle of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal.

Detailed Application Field Plans

1. Power Supplies: Used for high voltage switching in power supply circuits.
2. Motor Control: Employed in motor control circuits for efficient switching of high currents.
3. High Current Switching Circuits: Ideal for various high current switching applications due to its low on-resistance.

Detailed and Complete Alternative Models

1. IRF630: Lower voltage rating but similar characteristics
2. IRF840: Higher voltage rating with comparable characteristics
3. IRF740: Lower current rating but similar voltage and characteristics

This comprehensive entry provides an in-depth understanding of the IRF640STRLPBF, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.