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SI2302CDS-T1-GE3

SI2302CDS-T1-GE3

Product Overview

Category

The SI2302CDS-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used as a switching device in various electronic circuits and applications.

Characteristics

  • Low on-resistance
  • High-speed switching
  • Low gate drive power
  • Small package size

Package

The SI2302CDS-T1-GE3 is typically available in a SOT-23 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices.

Packaging/Quantity

It is usually supplied in reels with a quantity varying based on the manufacturer's specifications.

Specifications

  • Drain-Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 2.6A
  • On-Resistance (Rds On): 0.08 Ohms
  • Power Dissipation (Pd): 1.25W
  • Threshold Voltage (Vgs): 1-2V
  • Maximum Operating Temperature: 150°C

Detailed Pin Configuration

The SI2302CDS-T1-GE3 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Fast switching speed
  • Low power consumption
  • Reliable performance in various operating conditions

Advantages

  • Small form factor
  • Low on-resistance leading to minimal power loss
  • Suitable for battery-operated devices due to low gate drive power requirements

Disadvantages

  • Limited maximum drain-source voltage compared to some other MOSFETs
  • May not be suitable for high-power applications

Working Principles

The SI2302CDS-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI2302CDS-T1-GE3 is widely used in: - Portable electronic devices - Battery management systems - Power supply units - Motor control circuits

Detailed and Complete Alternative Models

Some alternative models to the SI2302CDS-T1-GE3 include: - SI2301DS-T1-GE3 - SI2304DS-T1-GE3 - SI2305DS-T1-GE3

In conclusion, the SI2302CDS-T1-GE3 is a versatile power MOSFET with excellent characteristics suitable for a wide range of electronic applications, especially those requiring efficient power management and control.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SI2302CDS-T1-GE3 en soluciones técnicas

  1. What is the maximum drain-source voltage of SI2302CDS-T1-GE3?

    • The maximum drain-source voltage of SI2302CDS-T1-GE3 is 20V.
  2. What is the continuous drain current of SI2302CDS-T1-GE3?

    • The continuous drain current of SI2302CDS-T1-GE3 is 2.7A.
  3. What is the on-resistance of SI2302CDS-T1-GE3?

    • The on-resistance of SI2302CDS-T1-GE3 is typically 85mΩ at Vgs=4.5V.
  4. What is the gate threshold voltage of SI2302CDS-T1-GE3?

    • The gate threshold voltage of SI2302CDS-T1-GE3 is typically 1.0V.
  5. What are the typical applications of SI2302CDS-T1-GE3?

    • SI2302CDS-T1-GE3 is commonly used in power management, load switching, and battery protection applications.
  6. Is SI2302CDS-T1-GE3 suitable for use in automotive applications?

    • Yes, SI2302CDS-T1-GE3 is suitable for use in automotive applications.
  7. What is the operating temperature range of SI2302CDS-T1-GE3?

    • The operating temperature range of SI2302CDS-T1-GE3 is -55°C to 150°C.
  8. Does SI2302CDS-T1-GE3 have built-in ESD protection?

    • Yes, SI2302CDS-T1-GE3 has built-in ESD protection.
  9. What is the package type of SI2302CDS-T1-GE3?

    • SI2302CDS-T1-GE3 is available in a SOT-23 package.
  10. Can SI2302CDS-T1-GE3 be used in low-power portable devices?

    • Yes, SI2302CDS-T1-GE3 can be used in low-power portable devices due to its low on-resistance and high efficiency.