SI2367DS-T1-GE3

Product Overview

Category

The SI2367DS-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

• Low on-resistance
• High current handling capability
• Fast switching speed
• Low gate drive requirements

Package

The SI2367DS-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET offers high performance and reliability in power management applications.

Packaging/Quantity

It is usually supplied in reels with a standard quantity per reel, typically 3000 units.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 20A
• RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI2367DS-T1-GE3 features a standard SO-8 pin configuration: 1. Gate 2. Drain 3. Source 4. N/C 5. Source 6. Drain 7. N/C 8. Gate

Functional Features

• Low on-resistance for minimal power dissipation
• High current handling capability for efficient power management
• Fast switching speed for improved system response
• Robust construction for reliable operation in demanding environments

Advantages and Disadvantages

Advantages

• High efficiency in power management applications
• Compact package for space-constrained designs
• Reliable performance under varying operating conditions

Disadvantages

• Sensitive to electrostatic discharge (ESD)
• Higher cost compared to traditional bipolar transistors

Working Principles

The SI2367DS-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SI2367DS-T1-GE3 is well-suited for various power management applications, including: - DC-DC converters - Voltage regulation in portable devices - Motor control circuits - LED lighting systems

Detailed and Complete Alternative Models

• SI2302DS-T1-GE3
• SI2337DS-T1-GE3
• SI2399DS-T1-GE3

In conclusion, the SI2367DS-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for a wide range of power management applications, making it an essential component in modern electronic systems.

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