SI3421DV-T1-GE3

Product Category

The SI3421DV-T1-GE3 belongs to the category of power MOSFETs, specifically designed for use in various electronic applications.

Basic Information Overview

• Category: Power MOSFET
• Use: Designed for power management and switching applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power handling and control
• Packaging/Quantity: Available in tape and reel packaging, quantity varies by supplier

Specifications

• Voltage Rating: 30V
• Current Rating: 8A
• On-Resistance: 12mΩ
• Package Type: DFN-8

Detailed Pin Configuration

The SI3421DV-T1-GE3 features a DFN-8 package with pin configuration as follows: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for efficient power management
• Enhanced thermal performance for reliability in high-power applications

Advantages and Disadvantages

Advantages: - High efficiency - Compact package size - Suitable for high-frequency applications

Disadvantages: - Sensitive to overvoltage conditions - Limited maximum current rating

Working Principles

The SI3421DV-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel.

Detailed Application Field Plans

This power MOSFET is suitable for a wide range of applications including: - DC-DC converters - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

• SI3441DV-T1-GE3: Higher current rating
• SI3411DV-T1-GE3: Lower on-resistance
• SI3451DV-T1-GE3: Enhanced thermal performance

This comprehensive entry provides detailed information about the SI3421DV-T1-GE3 power MOSFET, covering its category, basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.