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SI4488DY-T1-E3

SI4488DY-T1-E3

Product Overview

Category

The SI4488DY-T1-E3 belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and applications.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate drive voltage
  • Low input capacitance

Package

The SI4488DY-T1-E3 is available in a standard D-PAK package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

The SI4488DY-T1-E3 is typically packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 16A
  • RDS(ON) (Max) @ VGS = 10V: 6.5mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Gate Charge (Qg): 18nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4488DY-T1-E3 has a standard pin configuration with three pins: Gate, Drain, and Source.

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient operation
  • High current capability for handling heavy loads
  • Low gate drive voltage for ease of control

Advantages

  • Efficient power management
  • Suitable for high-frequency applications
  • Compact and reliable design
  • Low power dissipation

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SI4488DY-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI4488DY-T1-E3 is commonly used in: - Switching power supplies - DC-DC converters - Motor control circuits - LED lighting applications - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI4488DY-T1-E3 include: - SI2302DS-T1-GE3 - SI2337DS-T1-GE3 - SI4410DY-T1-GE3 - SI4562DY-T1-GE3

In conclusion, the SI4488DY-T1-E3 power MOSFET offers efficient power management and control capabilities, making it suitable for a wide range of electronic applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SI4488DY-T1-E3 en soluciones técnicas

  1. What is the maximum drain-source voltage rating of SI4488DY-T1-E3?

    • The maximum drain-source voltage rating of SI4488DY-T1-E3 is 30V.
  2. What is the typical on-resistance of SI4488DY-T1-E3?

    • The typical on-resistance of SI4488DY-T1-E3 is 12mΩ at Vgs = 10V.
  3. What is the maximum continuous drain current of SI4488DY-T1-E3?

    • The maximum continuous drain current of SI4488DY-T1-E3 is 64A.
  4. What is the gate threshold voltage of SI4488DY-T1-E3?

    • The gate threshold voltage of SI4488DY-T1-E3 typically ranges from 1V to 2.5V.
  5. What are the recommended operating temperature range for SI4488DY-T1-E3?

    • The recommended operating temperature range for SI4488DY-T1-E3 is -55°C to 150°C.
  6. Is SI4488DY-T1-E3 suitable for automotive applications?

    • Yes, SI4488DY-T1-E3 is suitable for automotive applications.
  7. Does SI4488DY-T1-E3 have built-in ESD protection?

    • Yes, SI4488DY-T1-E3 has built-in ESD protection.
  8. What is the package type of SI4488DY-T1-E3?

    • SI4488DY-T1-E3 comes in a DPAK (TO-252) package.
  9. Can SI4488DY-T1-E3 be used in power management applications?

    • Yes, SI4488DY-T1-E3 can be used in power management applications.
  10. Are there any application notes or reference designs available for using SI4488DY-T1-E3 in technical solutions?

    • Yes, application notes and reference designs are available to assist in using SI4488DY-T1-E3 in technical solutions.