Vishay Siliconix
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
SIHF15N65E-GE3
Ver Detalle Hojas de datos

SIHF15N65E-GE3

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High voltage, high current capability, low on-state resistance - Package: TO-220 Full Pack - Essence: Silicon Insulated Gate Bipolar Transistor (IGBT) - Packaging/Quantity: Tape & Reel (800 units per reel)

Specifications: - Voltage Rating: 650V - Current Rating: 15A - RDS(on): 0.29Ω - Gate Charge: 40nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Collector - Pin 3: Emitter

Functional Features: - High voltage capability - Low gate charge - Fast switching speed - Low thermal resistance

Advantages: - High power efficiency - Reduced conduction losses - Enhanced system reliability - Suitable for high-frequency applications

Disadvantages: - Higher cost compared to traditional MOSFETs - Sensitive to overvoltage conditions

Working Principles: The SIHF15N65E-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of a channel.

Detailed Application Field Plans: - Switched-mode power supplies - Motor drives - Inverters - Induction heating - Uninterruptible power supplies (UPS)

Detailed and Complete Alternative Models: - Infineon Technologies IGBT Modules - ON Semiconductor IGBTs - STMicroelectronics IGBTs

This comprehensive entry provides an in-depth understanding of the SIHF15N65E-GE3, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SIHF15N65E-GE3 en soluciones técnicas

  1. What is the maximum drain-source voltage of SIHF15N65E-GE3?

    • The maximum drain-source voltage of SIHF15N65E-GE3 is 650 volts.

  2. What is the continuous drain current rating of SIHF15N65E-GE3?

    • The continuous drain current rating of SIHF15N65E-GE3 is 15 amperes.

  3. What is the on-state resistance (RDS(on)) of SIHF15N65E-GE3?

    • The on-state resistance (RDS(on)) of SIHF15N65E-GE3 is typically 0.15 ohms.

  4. Can SIHF15N65E-GE3 be used in high-frequency switching applications?

    • Yes, SIHF15N65E-GE3 can be used in high-frequency switching applications due to its low RDS(on) and fast switching characteristics.

  5. Is SIHF15N65E-GE3 suitable for use in power supplies?

    • Yes, SIHF15N65E-GE3 is suitable for use in power supplies, especially in applications requiring high efficiency and high power density.

  6. What is the operating temperature range of SIHF15N65E-GE3?

    • The operating temperature range of SIHF15N65E-GE3 is typically -55°C to 150°C.

  7. Does SIHF15N65E-GE3 require a heat sink for thermal management?

    • Depending on the application and power dissipation, a heat sink may be required for optimal thermal management of SIHF15N65E-GE3.

  8. Can SIHF15N65E-GE3 be used in automotive applications?

    • Yes, SIHF15N65E-GE3 is suitable for use in automotive applications, such as electric vehicle power systems and battery management.

  9. What are the typical gate charge and gate-source voltage of SIHF15N65E-GE3?

    • The typical gate charge of SIHF15N65E-GE3 is 35nC, and the gate-source voltage is ±20 volts.

  10. Are there any recommended application circuits or reference designs for using SIHF15N65E-GE3?

    • Yes, the datasheet for SIHF15N65E-GE3 provides recommended application circuits and reference designs for various technical solutions.