SIHP15N50E-GE3

Introduction

The SIHP15N50E-GE3 belongs to the category of power MOSFETs and is widely used in various electronic applications. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SIHP15N50E-GE3.

Basic Information Overview

• Category: Power MOSFET
• Use: The SIHP15N50E-GE3 is used as a switching device in power supply, motor control, and other high voltage applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: TO-220AB
• Essence: The essence of SIHP15N50E-GE3 lies in its ability to handle high currents and voltages with minimal power loss.
• Packaging/Quantity: Typically packaged in reels or tubes, with varying quantities based on manufacturer specifications.

Specifications

• Voltage Rating: 500V
• Current Rating: 15A
• On-State Resistance (RDS(on)): 0.38Ω
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 150°C
• Package Type: TO-220AB

Detailed Pin Configuration

The SIHP15N50E-GE3 follows the standard pin configuration for a TO-220AB package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High Voltage Capability: The MOSFET can withstand high voltages, making it suitable for high-power applications.
• Low On-State Resistance: This feature reduces power dissipation and improves efficiency in power conversion circuits.
• Fast Switching Speed: Enables rapid switching transitions, contributing to overall system performance.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low on-state resistance
• Fast switching speed
• Enhanced power efficiency

Disadvantages

• Sensitivity to static electricity
• Gate drive requirements may be more complex compared to lower voltage MOSFETs

Working Principles

The SIHP15N50E-GE3 operates based on the principle of field-effect transistors. When a sufficient gate-source voltage is applied, it allows current to flow between the drain and source terminals, effectively controlling the power flow in the circuit.

Detailed Application Field Plans

The SIHP15N50E-GE3 finds extensive use in the following applications: - Switched-mode power supplies - Motor control systems - Inverters and converters for renewable energy systems - High voltage DC-DC converters

Detailed and Complete Alternative Models

• Alternative Model 1: SIHP15N50C-E3
  • Voltage Rating: 500V
  • Current Rating: 15A
  • Package Type: TO-220AB
• Alternative Model 2: SIHP15N50D-E3
  • Voltage Rating: 500V
  • Current Rating: 15A
  • Package Type: TO-220AB

In conclusion, the SIHP15N50E-GE3 power MOSFET offers high voltage capability, low on-state resistance, and fast switching speed, making it a versatile component for various high-power electronic applications.

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