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SIHP24N65E-E3
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SIHP24N65E-E3

Product Overview

Category

The SIHP24N65E-E3 belongs to the category of power MOSFETs.

Use

It is used for high-power applications such as in power supplies, motor control, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIHP24N65E-E3 comes in a TO-220AB package.

Essence

This MOSFET is designed to efficiently handle high power levels while minimizing losses.

Packaging/Quantity

It is typically packaged in reels with a quantity of 800 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 650V
  • Continuous Drain Current (ID): 24A
  • On-Resistance (RDS(on)): 0.19 Ohms
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 38nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The SIHP24N65E-E3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • High efficiency
  • Enhanced thermal performance
  • Reliable operation at high temperatures

Advantages

  • Suitable for high-power applications
  • Low on-resistance reduces power dissipation
  • Fast switching speed improves efficiency

Disadvantages

  • Higher cost compared to lower power MOSFETs
  • Larger footprint due to higher power handling capability

Working Principles

The SIHP24N65E-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is ideal for use in: - Switched-mode power supplies - Motor drives - Inverters for renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the SIHP24N65E-E3 include: - IRFP4668PbF - STW26NM60 - FDPF33N25T

In conclusion, the SIHP24N65E-E3 power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it suitable for various high-power applications. Its efficient design and reliable performance make it a preferred choice for demanding power electronics systems.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SIHP24N65E-E3 en soluciones técnicas

  1. What is the maximum drain-source voltage of SIHP24N65E-E3?

    • The maximum drain-source voltage of SIHP24N65E-E3 is 650V.

  2. What is the continuous drain current rating of SIHP24N65E-E3?

    • The continuous drain current rating of SIHP24N65E-E3 is 24A.

  3. What is the on-state resistance (RDS(on)) of SIHP24N65E-E3?

    • The on-state resistance (RDS(on)) of SIHP24N65E-E3 is typically 0.19 ohms.

  4. What is the gate threshold voltage of SIHP24N65E-E3?

    • The gate threshold voltage of SIHP24N65E-E3 is typically 2.5V.

  5. Can SIHP24N65E-E3 be used in high-frequency switching applications?

    • Yes, SIHP24N65E-E3 is suitable for high-frequency switching applications.

  6. What is the maximum junction temperature of SIHP24N65E-E3?

    • The maximum junction temperature of SIHP24N65E-E3 is 150°C.

  7. Does SIHP24N65E-E3 have built-in protection features?

    • SIHP24N65E-E3 does not have built-in protection features and may require external circuitry for protection.

  8. Is SIHP24N65E-E3 RoHS compliant?

    • Yes, SIHP24N65E-E3 is RoHS compliant.

  9. What are the typical applications for SIHP24N65E-E3?

    • Typical applications for SIHP24N65E-E3 include power supplies, motor drives, and inverters.

  10. What package type does SIHP24N65E-E3 come in?

    • SIHP24N65E-E3 comes in a TO-220AB package.