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SIR688DP-T1-GE3

SIR688DP-T1-GE3

Product Overview

Category

SIR688DP-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • High efficiency
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIR688DP-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET offers high performance and reliability in power management applications.

Packaging/Quantity

The SIR688DP-T1-GE3 is usually packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 60A
  • RDS(ON) (Max) @ VGS = 10V: 2.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 16nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The pin configuration for SIR688DP-T1-GE3 is as follows: 1. Gate (G) 2. Source (S) 3. Drain (D) 4. N/C 5. N/C 6. Source (S) 7. Drain (D) 8. Gate (G)

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance for reliability
  • ESD protection for robustness

Advantages and Disadvantages

Advantages

  • High efficiency
  • Low power dissipation
  • Reliable performance
  • ESD protection

Disadvantages

  • Higher cost compared to standard MOSFETs
  • More complex drive circuitry required

Working Principles

The SIR688DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently regulate and control power flow within electronic circuits.

Detailed Application Field Plans

The SIR688DP-T1-GE3 is well-suited for various applications including: - Switching power supplies - DC-DC converters - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

Some alternative models to SIR688DP-T1-GE3 include: - SIR878DP-T1-GE3 - SIR766DP-T1-GE3 - SIR529DP-T1-GE3 - SIR212DP-T1-GE3

In conclusion, the SIR688DP-T1-GE3 power MOSFET offers high-performance characteristics, making it an ideal choice for power management applications requiring efficiency and reliability.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SIR688DP-T1-GE3 en soluciones técnicas

  1. What is the maximum operating temperature of SIR688DP-T1-GE3?

    • The maximum operating temperature of SIR688DP-T1-GE3 is typically 150°C.
  2. What is the typical input voltage range for SIR688DP-T1-GE3?

    • The typical input voltage range for SIR688DP-T1-GE3 is 4.5V to 60V.
  3. What is the typical output current capability of SIR688DP-T1-GE3?

    • The typical output current capability of SIR688DP-T1-GE3 is 10A.
  4. Does SIR688DP-T1-GE3 have overcurrent protection?

    • Yes, SIR688DP-T1-GE3 features overcurrent protection to safeguard against excessive currents.
  5. Is SIR688DP-T1-GE3 suitable for automotive applications?

    • Yes, SIR688DP-T1-GE3 is designed to meet the requirements for automotive applications.
  6. What is the typical efficiency of SIR688DP-T1-GE3?

    • The typical efficiency of SIR688DP-T1-GE3 is around 95%.
  7. Does SIR688DP-T1-GE3 require an external heat sink for thermal management?

    • Depending on the application and operating conditions, an external heat sink may be required for optimal thermal management.
  8. Can SIR688DP-T1-GE3 be used in high-frequency switching applications?

    • Yes, SIR688DP-T1-GE3 is suitable for high-frequency switching applications.
  9. What are the key protection features of SIR688DP-T1-GE3?

    • SIR688DP-T1-GE3 includes protection features such as overcurrent protection, overtemperature protection, and undervoltage lockout.
  10. Is SIR688DP-T1-GE3 RoHS compliant?

    • Yes, SIR688DP-T1-GE3 is RoHS compliant, meeting environmental standards for hazardous substance restrictions.