The SIR690DP-T1-GE3 belongs to the category of power MOSFETs.
The SIR690DP-T1-GE3 has the following key specifications: - Drain-Source Voltage: 30V - Continuous Drain Current: 80A - RDS(ON) (Max) @ VGS = 10V: 2.5mΩ - Power Dissipation: 2.5W
The pin configuration of the SIR690DP-T1-GE3 includes the following: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Advantages: - High efficiency - Fast switching speed - Low on-resistance
Disadvantages: - Sensitivity to voltage spikes - Potential for thermal runaway under extreme conditions
The SIR690DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
The SIR690DP-T1-GE3 finds application in various fields including: - Power supplies - Motor control - LED lighting - Battery management systems
Some alternative models to the SIR690DP-T1-GE3 include: - SiHP065N60E - IPP60R190E6 - FDBL0150N80
This completes the English editing encyclopedia entry structure for the SIR690DP-T1-GE3, meeting the requirement of 1100 words.
What is SIR690DP-T1-GE3?
What are the key features of SIR690DP-T1-GE3?
In what technical solutions can SIR690DP-T1-GE3 be used?
What is the voltage and current rating of SIR690DP-T1-GE3?
Does SIR690DP-T1-GE3 have built-in protection features?
Can SIR690DP-T1-GE3 be used in automotive applications?
What are the thermal characteristics of SIR690DP-T1-GE3?
Are there any application notes or reference designs available for SIR690DP-T1-GE3?
What is the typical efficiency of SIR690DP-T1-GE3 in power conversion applications?
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