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SQD50N06-09L_GE3
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SQD50N06-09L_GE3

Product Overview

Category

The SQD50N06-09L_GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power electronics applications such as motor control, power supplies, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SQD50N06-09L_GE3 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 50A
  • On-Resistance (RDS(on)): 9mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 40nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SQD50N06-09L_GE3 features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • High efficiency
  • Reliable switching performance
  • Enhanced thermal management

Advantages

  • Reduced power dissipation
  • Improved system reliability
  • Enhanced overall efficiency
  • Suitable for high-frequency applications

Disadvantages

  • Sensitivity to static electricity
  • Potential for thermal runaway if not properly managed

Working Principles

The MOSFET operates based on the principle of field-effect, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal.

Detailed Application Field Plans

The SQD50N06-09L_GE3 is well-suited for use in the following applications: - Brushless DC motor control - Switch-mode power supplies - Solar inverters - Electric vehicle powertrains

Detailed and Complete Alternative Models

  • IRF540N
  • FDP8870
  • STP55NF06L

In conclusion, the SQD50N06-09L_GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power electronics applications, providing efficient power management and control capabilities.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SQD50N06-09L_GE3 en soluciones técnicas

  1. What is the maximum drain-source voltage of SQD50N06-09L_GE3?

    • The maximum drain-source voltage of SQD50N06-09L_GE3 is 60V.

  2. What is the continuous drain current rating of SQD50N06-09L_GE3?

    • The continuous drain current rating of SQD50N06-09L_GE3 is 50A.

  3. What is the on-resistance of SQD50N06-09L_GE3?

    • The on-resistance of SQD50N06-09L_GE3 is typically 9mΩ at Vgs = 10V.

  4. Can SQD50N06-09L_GE3 be used for high-power applications?

    • Yes, SQD50N06-09L_GE3 is suitable for high-power applications due to its high current and voltage ratings.

  5. What is the gate threshold voltage of SQD50N06-09L_GE3?

    • The gate threshold voltage of SQD50N06-09L_GE3 is typically 2.5V.

  6. Is SQD50N06-09L_GE3 suitable for switching applications?

    • Yes, SQD50N06-09L_GE3 is designed for use in switching applications.

  7. What is the operating temperature range of SQD50N06-09L_GE3?

    • The operating temperature range of SQD50N06-09L_GE3 is -55°C to 175°C.

  8. Does SQD50N06-09L_GE3 require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of SQD50N06-09L_GE3.

  9. What type of package does SQD50N06-09L_GE3 come in?

    • SQD50N06-09L_GE3 is available in a TO-252 (DPAK) package.

  10. Is SQD50N06-09L_GE3 RoHS compliant?

    • Yes, SQD50N06-09L_GE3 is RoHS compliant, making it suitable for environmentally conscious designs.