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SQJ461EP-T1_GE3
Introduction
The SQJ461EP-T1GE3 is a semiconductor product belonging to the category of power MOSFETs. This device is designed for use in various electronic applications, offering specific characteristics and advantages. In this entry, we will provide an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SQJ461EP-T1GE3.
Basic Information Overview
- Category: Power MOSFET
- Use: Electronic applications requiring power switching
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-263-7L
- Essence: Efficient power management
- Packaging/Quantity: Tape & Reel, 800 units per reel
Specifications
- Voltage Rating: 100V
- Continuous Drain Current: 30A
- On-Resistance: 8.5mΩ
- Gate Threshold Voltage: 2.5V
- Maximum Power Dissipation: 2.5W
Detailed Pin Configuration
The SQJ461EP-T1_GE3 features a TO-263-7L package with the following pin configuration: 1. Gate 2. Source 3. Source 4. Source 5. Drain 6. Drain 7. Drain
Functional Features
- High voltage capability for power applications
- Low on-resistance for efficient power management
- Fast switching speed for improved performance
Advantages and Disadvantages
Advantages
- Enhanced power efficiency
- Reduced heat dissipation
- Improved system reliability
Disadvantages
- Sensitivity to overvoltage conditions
- Limited current handling capacity
Working Principles
The SQJ461EP-T1_GE3 operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a suitable gate voltage is applied, the device allows the flow of current between the drain and source terminals, enabling efficient power switching.
Detailed Application Field Plans
The SQJ461EP-T1_GE3 is suitable for a wide range of applications, including but not limited to: - Switching power supplies - Motor control systems - LED lighting - Battery management systems
Detailed and Complete Alternative Models
For applications requiring similar functionality, alternative models to the SQJ461EP-T1_GE3 include: - IRF1010E - FDP8878 - SIHP06N60E
In conclusion, the SQJ461EP-T1_GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it a versatile choice for various electronic applications.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SQJ461EP-T1_GE3 en soluciones técnicas
What is the operating voltage range of SQJ461EP-T1_GE3?
- The operating voltage range of SQJ461EP-T1_GE3 is typically from 4.5V to 20V.
What is the maximum drain-source voltage of SQJ461EP-T1_GE3?
- The maximum drain-source voltage of SQJ461EP-T1_GE3 is 30V.
What is the typical on-state resistance of SQJ461EP-T1_GE3?
- The typical on-state resistance of SQJ461EP-T1_GE3 is 6.5mΩ.
What is the maximum continuous drain current of SQJ461EP-T1_GE3?
- The maximum continuous drain current of SQJ461EP-T1_GE3 is 80A.
What are the typical applications for SQJ461EP-T1_GE3?
- SQJ461EP-T1_GE3 is commonly used in automotive and industrial applications such as motor control, power distribution, and battery management systems.
What is the thermal resistance of SQJ461EP-T1_GE3?
- The thermal resistance of SQJ461EP-T1_GE3 is typically 0.7°C/W.
Does SQJ461EP-T1_GE3 have built-in protection features?
- Yes, SQJ461EP-T1_GE3 includes overcurrent protection and thermal shutdown features.
What is the package type of SQJ461EP-T1_GE3?
- SQJ461EP-T1_GE3 is available in a PowerPAK® SO-8 package.
What is the recommended operating temperature range for SQJ461EP-T1_GE3?
- The recommended operating temperature range for SQJ461EP-T1_GE3 is from -55°C to 175°C.
Is SQJ461EP-T1_GE3 RoHS compliant?
- Yes, SQJ461EP-T1_GE3 is RoHS compliant, making it suitable for use in environmentally sensitive applications.