SQR50N04-3M8_GE3

Introduction

The SQR50N04-3M8_GE3 is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Components
• Use: Power switching applications
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-252 (DPAK)
• Essence: Power MOSFET for efficient power management
• Packaging/Quantity: Typically available in reels of 2500 units

Specifications

• Voltage Rating: 40V
• Current Rating: 50A
• On-Resistance: 3mΩ
• Gate Threshold Voltage: 2V
• Maximum Power Dissipation: 2.5W
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SQR50N04-3M8_GE3 follows the standard pin configuration for a TO-252 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for efficient power management
• High voltage capability for versatile applications

Advantages and Disadvantages

Advantages

• Efficient power management
• Versatile applications
• Fast switching speed

Disadvantages

• Limited to low-voltage applications
• Sensitivity to static discharge

Working Principles

The SQR50N04-3M8_GE3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the source and drain terminals. By modulating the gate voltage, the MOSFET can efficiently switch high currents with minimal power loss.

Detailed Application Field Plans

The SQR50N04-3M8_GE3 is suitable for various power switching applications, including but not limited to: - Motor control systems - Power supplies - DC-DC converters - Inverters

Detailed and Complete Alternative Models

Some alternative models to the SQR50N04-3M8_GE3 include: - IRF540N - FQP50N06 - STP55NF06L

In conclusion, the SQR50N04-3M8_GE3 is a power MOSFET designed for efficient power management in various applications, offering high voltage capability, low on-resistance, and fast switching speed. While it has limitations in terms of voltage range and sensitivity to static discharge, its advantages make it a valuable component in power electronics.

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