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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Número de pieza
NCP5106BDR2G
Categoría
Power Chip > Gate Driver IC
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SOIC-8-150mil
Embalaje
taping
Número de paquetes
2500
Descripción
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
Solicitud de cotización
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En stock 75348 PCS
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Palabras clave deNCP5106BDR2G
NCP5106BDR2G Componentes electrónicos
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NCP5106BDR2G Tabla de datos
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NCP5106BDR2G Adquisitivo
NCP5106BDR2G Chip