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NCV57000DWR2G Isolated high current and high efficiency IGBT gate drivers with internal galvanic isolation.

NCV57000DWR2G

Isolated high current and high efficiency IGBT gate drivers with internal galvanic isolation.
Número de pieza
NCV57000DWR2G
Categoría
Power Chip > Gate Driver IC
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SOIC-16-300mil
Embalaje
taping
Número de paquetes
1000
Descripción
The NCV57000 is a high current single-channel IGBT driver with internal galvanic isolation for high system efficiency and reliability in high power applications. Features include complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate UVLO, DESAT protection, soft shutdown on DESAT, and separate high and low driver outputs (OUTH and OUTL ). The NCV57000 can accommodate 5V and 3.3V signals on the input side, and a wide bias voltage range on the driver side, including negative voltage capability. The NCV57000 offers > 5 kVrms (UL1577 rated) galvanic isolation and > 1200 Viorm (working voltage). The NCV57000 uses a wide body SOIC-16 encapsulation that guarantees 8 mm creepage distance between input and output, meeting reinforced safety insulation requirements.
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En stock 84093 PCS
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