IRFSL11N50APBF

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high voltage applications
Characteristics: High voltage capability, low on-resistance, fast switching speed
Package: TO-262
Essence: Power MOSFET for high voltage switching applications
Packaging/Quantity: Available in reels of 1000 units

Specifications

• Voltage Rating: 500V
• Continuous Drain Current: 11A
• RDS(ON): 0.45Ω
• Gate Threshold Voltage: 2-4V
• Pulsed Drain Current: 44A
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IRFSL11N50APBF features a standard TO-262 pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for efficient operation
• High voltage capability for versatile applications

Advantages and Disadvantages

Advantages: - High voltage capability allows for use in various applications - Low on-resistance reduces power loss and improves efficiency - Fast switching speed enhances performance in dynamic systems

Disadvantages: - Higher cost compared to lower voltage MOSFETs - Sensitive to static electricity and voltage spikes

Working Principles

The IRFSL11N50APBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage is applied, it creates an electric field that modulates the conductivity of the channel, allowing for efficient switching and control of high voltages.

Detailed Application Field Plans

1. Power Supplies: Utilized in high voltage power supply circuits for efficient switching and regulation.
2. Motor Control: Integrated into motor drive circuits to manage high voltage requirements for motor control applications.
3. High Voltage Converters: Employed in high voltage converter designs for effective power management.

Detailed and Complete Alternative Models

1. IRFSL11N50LPbF: Similar specifications with lead-free packaging
2. IRFSL11N50NPbF: Lower RDS(ON) and higher continuous drain current
3. IRFSL11N50SPbF: Enhanced switching speed and lower gate threshold voltage

Note: The alternatives listed are indicative and may vary based on specific application requirements.

This comprehensive entry provides detailed insights into the IRFSL11N50APBF Power MOSFET, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.